30-nm scale fabrication of magnetic tunnel junctions using EB assisted CVD hard masks

Shinji Isogami, Masakiyo Tsunoda, Migaku Takahashi

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

30-nm scale fabrication of magnetic tunnel junctions (MTJs) was demonstrated. A scanning electron microscope (SEM) was used for chemical-vapor deposition (CVD) of carbon hard masks. Using electron beam (EB)-CVD, less than several 10-nm scale carbon pillar could be formed on MTJ films. Argon ion milling, of which incident angle from the normal of the film plane was determined 45° and 75°, was utilized to pattern the MTJs. TMR properties of 80-nm scale MTJs were successfully measured using DC-four-probe at room temperature.

Original languageEnglish
Pages (from-to)3607-3609
Number of pages3
JournalIEEE Transactions on Magnetics
Volume41
Issue number10
DOIs
Publication statusPublished - 2005 Oct 1

Keywords

  • Argon ion milling
  • Chemical-vapor deposition (CVD)
  • Magnetic tunnel junctions (MTJs)
  • Scanning-electron microscope (SEM)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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