Abstract
30-nm scale fabrication of magnetic tunnel junctions (MTJs) was demonstrated. A scanning electron microscope (SEM) was used for chemical-vapor deposition (CVD) of carbon hard masks. Using electron beam (EB)-CVD, less than several 10-nm scale carbon pillar could be formed on MTJ films. Argon ion milling, of which incident angle from the normal of the film plane was determined 45° and 75°, was utilized to pattern the MTJs. TMR properties of 80-nm scale MTJs were successfully measured using DC-four-probe at room temperature.
| Original language | English |
|---|---|
| Pages (from-to) | 3607-3609 |
| Number of pages | 3 |
| Journal | IEEE Transactions on Magnetics |
| Volume | 41 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2005 Oct 1 |
Keywords
- Argon ion milling
- Chemical-vapor deposition (CVD)
- Magnetic tunnel junctions (MTJs)
- Scanning-electron microscope (SEM)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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Cite this
Isogami, S., Tsunoda, M., & Takahashi, M. (2005). 30-nm scale fabrication of magnetic tunnel junctions using EB assisted CVD hard masks. IEEE Transactions on Magnetics, 41(10), 3607-3609. https://doi.org/10.1109/TMAG.2005.854786