30-nm scale fabrication of magnetic tunnel junctions using EB assisted CVD hard masks

Shinji Isogami; Masakiyo Tsunoda; Migaku Takahashi

doi:10.1109/TMAG.2005.854786

30-nm scale fabrication of magnetic tunnel junctions using EB assisted CVD hard masks

Shinji Isogami, Masakiyo Tsunoda, Migaku Takahashi

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

30-nm scale fabrication of magnetic tunnel junctions (MTJs) was demonstrated. A scanning electron microscope (SEM) was used for chemical-vapor deposition (CVD) of carbon hard masks. Using electron beam (EB)-CVD, less than several 10-nm scale carbon pillar could be formed on MTJ films. Argon ion milling, of which incident angle from the normal of the film plane was determined 45° and 75°, was utilized to pattern the MTJs. TMR properties of 80-nm scale MTJs were successfully measured using DC-four-probe at room temperature.

Original language	English
Pages (from-to)	3607-3609
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	41
Issue number	10
DOIs	https://doi.org/10.1109/TMAG.2005.854786
Publication status	Published - 2005 Oct
Externally published	Yes

Keywords

Argon ion milling
Chemical-vapor deposition (CVD)
Magnetic tunnel junctions (MTJs)
Scanning-electron microscope (SEM)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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abstract = "30-nm scale fabrication of magnetic tunnel junctions (MTJs) was demonstrated. A scanning electron microscope (SEM) was used for chemical-vapor deposition (CVD) of carbon hard masks. Using electron beam (EB)-CVD, less than several 10-nm scale carbon pillar could be formed on MTJ films. Argon ion milling, of which incident angle from the normal of the film plane was determined 45° and 75°, was utilized to pattern the MTJs. TMR properties of 80-nm scale MTJs were successfully measured using DC-four-probe at room temperature.",

keywords = "Argon ion milling, Chemical-vapor deposition (CVD), Magnetic tunnel junctions (MTJs), Scanning-electron microscope (SEM)",

author = "Shinji Isogami and Masakiyo Tsunoda and Migaku Takahashi",

year = "2005",

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doi = "10.1109/TMAG.2005.854786",

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AU - Isogami, Shinji

AU - Tsunoda, Masakiyo

AU - Takahashi, Migaku

PY - 2005/10

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N2 - 30-nm scale fabrication of magnetic tunnel junctions (MTJs) was demonstrated. A scanning electron microscope (SEM) was used for chemical-vapor deposition (CVD) of carbon hard masks. Using electron beam (EB)-CVD, less than several 10-nm scale carbon pillar could be formed on MTJ films. Argon ion milling, of which incident angle from the normal of the film plane was determined 45° and 75°, was utilized to pattern the MTJs. TMR properties of 80-nm scale MTJs were successfully measured using DC-four-probe at room temperature.

AB - 30-nm scale fabrication of magnetic tunnel junctions (MTJs) was demonstrated. A scanning electron microscope (SEM) was used for chemical-vapor deposition (CVD) of carbon hard masks. Using electron beam (EB)-CVD, less than several 10-nm scale carbon pillar could be formed on MTJ films. Argon ion milling, of which incident angle from the normal of the film plane was determined 45° and 75°, was utilized to pattern the MTJs. TMR properties of 80-nm scale MTJs were successfully measured using DC-four-probe at room temperature.

KW - Argon ion milling

KW - Chemical-vapor deposition (CVD)

KW - Magnetic tunnel junctions (MTJs)

KW - Scanning-electron microscope (SEM)

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30-nm scale fabrication of magnetic tunnel junctions using EB assisted CVD hard masks

Abstract

Keywords

ASJC Scopus subject areas

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