The device characteristics and fabrication of 30-nm-gate InAlAs/InGaAs high electron mobility transistors (HEMTs) lattice-matched to InP substrates are reported. The gate length of 30 nm is achieved for a T-shaped gate geometry, which is necessary to minimize gate resistance for short-gate HEMTs, by using fullerene-incorporated nanocomposite resist in the electron beam direct writing of the bottom of the gate. In addition, the two-step-recess gate technology is used to minimize the extension of effective gate length. The devices provide excellent RF characteristics; a record cutoff frequency of 350 GHz is achieved.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Issue number||2 B|
|Publication status||Published - 1999 Jan 1|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)