30-nm-gate InP-based lattice-matched high electron mobility transistors with 350 GHz cutoff frequency

Tetsuya Suemitsu, Tetsuyoshi Ishiii, Haruki Yokoyama, Takatomo Enoki, Yasunobu Ishii, Toshiaki Tamamura

Research output: Contribution to journalArticlepeer-review

54 Citations (Scopus)

Abstract

The device characteristics and fabrication of 30-nm-gate InAlAs/InGaAs high electron mobility transistors (HEMTs) lattice-matched to InP substrates are reported. The gate length of 30 nm is achieved for a T-shaped gate geometry, which is necessary to minimize gate resistance for short-gate HEMTs, by using fullerene-incorporated nanocomposite resist in the electron beam direct writing of the bottom of the gate. In addition, the two-step-recess gate technology is used to minimize the extension of effective gate length. The devices provide excellent RF characteristics; a record cutoff frequency of 350 GHz is achieved.

Original languageEnglish
Pages (from-to)L154-L156
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume38
Issue number2 B
DOIs
Publication statusPublished - 1999 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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