Abstract
In this paper, we report the fabrication and the device characteristics of the InP-based lattice-matched HEMTs with a 30-mn gate, which is the smallest gate yet achieved for inP-based HEMTs. A fullerene-incorporated nanocomposite resist is used in electron beam (EB) lithography to achieve such a small gate. A cutoff frequency of the 30-nm-gate HEMTs is 350 GHz, which is comparable to the reported value for 50-nm-gate InP-based pseudomorphic HEMTs and one of the highest value achieved by any kind of three-terminal electronic device.
| Original language | English |
|---|---|
| Pages (from-to) | 223-226 |
| Number of pages | 4 |
| Journal | Technical Digest - International Electron Devices Meeting |
| Publication status | Published - 1998 Dec 1 |
| Externally published | Yes |
| Event | Proceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA Duration: 1998 Dec 6 → 1998 Dec 9 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry