3-Dimensional and damage-free neutral beam etching for MEMS applications

Akira Wada, Tomohiro Kubota, Yuuki Yanagisawa, Batnasan Altansukh, Seiji Samukawa, Tatahito Ono, Kazuhiro Miwa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

To fabricate high reliability Micro Electro Mechanical Systems (MEMS) devices, damage-free etching with high aspect three-dimensional (3D) structure is important. Plasma etching resulted in profile anomaly near high aspect 3D structure due to distortion of ion trajectory by distortion of ion sheath and degradation of mechanical property of MEMS devices due to defect generation by UV irradiation, respectively. Conversely, neutral beam was found to be a favorable technique to realize precise and damage-free etching for high aspect ratio and 3D MEMS structure.

Original languageEnglish
Title of host publicationIEEE SENSORS 2012 - Proceedings
DOIs
Publication statusPublished - 2012
Event11th IEEE SENSORS 2012 Conference - Taipei, Taiwan, Province of China
Duration: 2012 Oct 282012 Oct 31

Publication series

NameProceedings of IEEE Sensors

Other

Other11th IEEE SENSORS 2012 Conference
CountryTaiwan, Province of China
CityTaipei
Period12/10/2812/10/31

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Wada, A., Kubota, T., Yanagisawa, Y., Altansukh, B., Samukawa, S., Ono, T., & Miwa, K. (2012). 3-Dimensional and damage-free neutral beam etching for MEMS applications. In IEEE SENSORS 2012 - Proceedings [6411442] (Proceedings of IEEE Sensors). https://doi.org/10.1109/ICSENS.2012.6411442