2H-SiC films grown by laser chemical vapor deposition

Akihiko Ito, Hitoshi Kanno, Takashi Goto

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

We demonstrated the synthesis of 2H-SiC films on graphite and (0001) sapphire substrates by laser chemical vapor deposition. A tris(dimethylamino) silane was used as a novel precursor for the synthesis of SiC films in a CH4 atmosphere. The 2H-SiC films were obtained at a deposition temperature of 920K on the sapphire substrate. The films comprised a-axis-oriented columnar grains and their in-plane orientation relationship was [1000] 2H-SiC // [0001] sapphire and [0001] 2H-SiC // [1000] sapphire. The films were deposited at the rate of 182μmh-1.

Original languageEnglish
Article number10252
Pages (from-to)4611-4615
Number of pages5
JournalJournal of the European Ceramic Society
Volume35
Issue number16
DOIs
Publication statusPublished - 2015 Dec

Keywords

  • 2H-SiC
  • Chemical vapor deposition
  • Film
  • Silicon carbide

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry

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