2H-SiC films grown by laser chemical vapor deposition

Akihiko Ito; Hitoshi Kanno; Takashi Goto

doi:10.1016/j.jeurceramsoc.2015.08.028

2H-SiC films grown by laser chemical vapor deposition

Akihiko Ito, Hitoshi Kanno, Takashi Goto

Materials Processing and Characterization Division

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

We demonstrated the synthesis of 2H-SiC films on graphite and (0001) sapphire substrates by laser chemical vapor deposition. A tris(dimethylamino) silane was used as a novel precursor for the synthesis of SiC films in a CH₄ atmosphere. The 2H-SiC films were obtained at a deposition temperature of 920K on the sapphire substrate. The films comprised a-axis-oriented columnar grains and their in-plane orientation relationship was [1000] 2H-SiC // [0001] sapphire and [0001] 2H-SiC // [1000] sapphire. The films were deposited at the rate of 182μmh^-1.

Original language	English
Article number	10252
Pages (from-to)	4611-4615
Number of pages	5
Journal	Journal of the European Ceramic Society
Volume	35
Issue number	16
DOIs	https://doi.org/10.1016/j.jeurceramsoc.2015.08.028
Publication status	Published - 2015 Dec

Keywords

2H-SiC
Chemical vapor deposition
Film
Silicon carbide

ASJC Scopus subject areas

Ceramics and Composites
Materials Chemistry

Access to Document

10.1016/j.jeurceramsoc.2015.08.028

Cite this

@article{4f8c1617a69d4b4c92b03acd45b16bdb,

title = "2H-SiC films grown by laser chemical vapor deposition",

abstract = "We demonstrated the synthesis of 2H-SiC films on graphite and (0001) sapphire substrates by laser chemical vapor deposition. A tris(dimethylamino) silane was used as a novel precursor for the synthesis of SiC films in a CH4 atmosphere. The 2H-SiC films were obtained at a deposition temperature of 920K on the sapphire substrate. The films comprised a-axis-oriented columnar grains and their in-plane orientation relationship was [1000] 2H-SiC // [0001] sapphire and [0001] 2H-SiC // [1000] sapphire. The films were deposited at the rate of 182μmh-1.",

keywords = "2H-SiC, Chemical vapor deposition, Film, Silicon carbide",

author = "Akihiko Ito and Hitoshi Kanno and Takashi Goto",

note = "Funding Information: This research was supported in part by a Grant-in-Aid for Young Scientists (A) (No. 25709069) from the Japan Society for the Promotion of Science (JSPS) , and in part by Council for Science, Technology and Innovation (CSTI) , Cross-ministerial Strategic Innovation Promotion Program (SIP) , “Structural Materials for Innovation” (Funding agency: JST) . XPS measurement was supported by the cooperative program (No. 15G0410) of the CRDAM-IMR, Tohoku University, Japan. Publisher Copyright: {\textcopyright} 2015 Elsevier Ltd.",

year = "2015",

month = dec,

doi = "10.1016/j.jeurceramsoc.2015.08.028",

language = "English",

volume = "35",

pages = "4611--4615",

journal = "Journal of the European Ceramic Society",

issn = "0955-2219",

publisher = "Elsevier BV",

number = "16",

}

TY - JOUR

T1 - 2H-SiC films grown by laser chemical vapor deposition

AU - Ito, Akihiko

AU - Kanno, Hitoshi

AU - Goto, Takashi

N1 - Funding Information: This research was supported in part by a Grant-in-Aid for Young Scientists (A) (No. 25709069) from the Japan Society for the Promotion of Science (JSPS) , and in part by Council for Science, Technology and Innovation (CSTI) , Cross-ministerial Strategic Innovation Promotion Program (SIP) , “Structural Materials for Innovation” (Funding agency: JST) . XPS measurement was supported by the cooperative program (No. 15G0410) of the CRDAM-IMR, Tohoku University, Japan. Publisher Copyright: © 2015 Elsevier Ltd.

PY - 2015/12

Y1 - 2015/12

N2 - We demonstrated the synthesis of 2H-SiC films on graphite and (0001) sapphire substrates by laser chemical vapor deposition. A tris(dimethylamino) silane was used as a novel precursor for the synthesis of SiC films in a CH4 atmosphere. The 2H-SiC films were obtained at a deposition temperature of 920K on the sapphire substrate. The films comprised a-axis-oriented columnar grains and their in-plane orientation relationship was [1000] 2H-SiC // [0001] sapphire and [0001] 2H-SiC // [1000] sapphire. The films were deposited at the rate of 182μmh-1.

AB - We demonstrated the synthesis of 2H-SiC films on graphite and (0001) sapphire substrates by laser chemical vapor deposition. A tris(dimethylamino) silane was used as a novel precursor for the synthesis of SiC films in a CH4 atmosphere. The 2H-SiC films were obtained at a deposition temperature of 920K on the sapphire substrate. The films comprised a-axis-oriented columnar grains and their in-plane orientation relationship was [1000] 2H-SiC // [0001] sapphire and [0001] 2H-SiC // [1000] sapphire. The films were deposited at the rate of 182μmh-1.

KW - 2H-SiC

KW - Chemical vapor deposition

KW - Film

KW - Silicon carbide

UR - http://www.scopus.com/inward/record.url?scp=84943820530&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84943820530&partnerID=8YFLogxK

U2 - 10.1016/j.jeurceramsoc.2015.08.028

DO - 10.1016/j.jeurceramsoc.2015.08.028

M3 - Article

AN - SCOPUS:84943820530

SN - 0955-2219

VL - 35

SP - 4611

EP - 4615

JO - Journal of the European Ceramic Society

JF - Journal of the European Ceramic Society

IS - 16

M1 - 10252

ER -

2H-SiC films grown by laser chemical vapor deposition

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this