2,6-Dialkyl[1,2-b:4,5-b′]dithiophenes were synthesized as novel solution-processible organic semiconductors. Thin films of the organic semiconductors deposited on Si/SiO2 substrates by spin coating have well-ordered structures as confirmed by XRD analysis. Evaluations of the devices under ambient conditions showed typical p-channel FET responses with the field-effect mobility of ca. 10-2 cm2 V-1 s-1 and Ion/Ioff of ca. 105.
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