2.5kV 100A μ-stack IGBT

Yoshikazu Takahashi, Takeharu Koga, Humiaki Kirihata, Yasukazu Seki

Research output: Contribution to conferencePaperpeer-review

7 Citations (Scopus)

Abstract

A 2.5kV 100A μ(micro)-stack IGBT has been developed. This is the first work to demonstrate the possibility of a high voltage, high current and high reliable flat-packaged MOS controlled device. The 20mm square chip is press-contacted with an emitter electrode having four rectangular p-base regions on which the MOS gate is not arranged. The great advantage of this structure is the double side cooling and the emitter wire bondingless. The μ-stack IGBT shows the high blocking voltage of 2.5kV, the typical saturation voltage of 3.5V at the collector current Ic=100A, the turn-off capability of 3×Ic, and the good pressure contact for the electrical and thermal characteristics in the range from 100 to 800kg/chip.

Original languageEnglish
Pages25-30
Number of pages6
Publication statusPublished - 1994
Externally publishedYes
EventProceedings of the 1994 6th IEEE International Symposium on Power Semiconductor Devices & ICs - Davos, Switz
Duration: 1994 May 311994 Jun 2

Other

OtherProceedings of the 1994 6th IEEE International Symposium on Power Semiconductor Devices & ICs
CityDavos, Switz
Period94/5/3194/6/2

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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