2.51 eV photoluminescence from Zn-doped CuAlSe2 epilayers grown by low-pressure metalorganic chemical vapor deposition

S. Chichibu, S. Matsumoto, S. Shirakata, S. Isomura, H. Higuchi

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

A photoluminescence (PL) peak at 2.51 eV was observed at 77 K in Zn-doped CuAlSe2 chalcopyrite semiconductor epilayers grown by a low-pressure metalorganic chemical vapor deposition. The emission can be seen as blue-green. The PL peak at 2.51 eV was absent in Al-rich epilayers. Photoreflectance measurements were performed on both undoped and Zn-doped CuAlSe2 epilayers. Zn doping up to the level of 0.02 at. % did not affect the valence band profile.

Original languageEnglish
Pages (from-to)3306-3308
Number of pages3
JournalApplied Physics Letters
Volume62
Issue number25
DOIs
Publication statusPublished - 1993 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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