A 2.5-kV 2000-A monolithic reverse conducting gate turn-off thyristor (RC-GTO) has been developed by use of a precise lifetime control technique, a precise gate etching control technique, and an electrical separation technique between the GTO part and the diode part. It is most important for the RC-GTO to separate electrically the GTO part from the diode part. Hence the very high separation resistance of 100-150 Ω is attained by applying a double diffused profile, and a high turn-off current of 2000 A is achieved by applying the precise lifetime control technique and the precise gate etching control technique. Furthermore, by use of computer simulation and an image converter camera, the investigation has supported the development of the 2.5-kV 2000-A RC-GTO.
ASJC Scopus subject areas
- Control and Systems Engineering
- Industrial and Manufacturing Engineering
- Electrical and Electronic Engineering