2.5 kV-1000 A Power Pack IGBT (High power flat-packaged RC-IGBT)

Yoshikazu Takahashi, Koh Yoshikawa, Masayuki Soutome, Takeshi Fujii, Masami Ichijyou, Yasukazu Seki

Research output: Contribution to conferencePaper

9 Citations (Scopus)

Abstract

A 2.5 kV-1000 A Power Pack IGBT has been successfully developed. This Power Pack IGBT is specially designed for the high power and highly reliable industrial and traction use. Compared with conventional IGBT modules, this Power Pack IGBT is simple and compact for a 2.5 kV-1 kA class device because the assembled IGBT and FWD chips are able to shrink due to the low thermal impedance of both side cooling. The Power Pack IGBT shows the high blocking voltage of 2.5 kV, the maximum on-state voltage of 4.5 V at the collector current IC = 1000 A, Tj = 125 °C, and the turn-off capability of over 5×IC.

Original languageEnglish
Pages299-302
Number of pages4
Publication statusPublished - 1996 Jan 1
Externally publishedYes
EventProceedings of the 1996 IEEE 8th International Symposium on Power Semiconductor Devices and ICs - Maui, HI, USA
Duration: 1996 May 201996 May 23

Other

OtherProceedings of the 1996 IEEE 8th International Symposium on Power Semiconductor Devices and ICs
CityMaui, HI, USA
Period96/5/2096/5/23

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Takahashi, Y., Yoshikawa, K., Soutome, M., Fujii, T., Ichijyou, M., & Seki, Y. (1996). 2.5 kV-1000 A Power Pack IGBT (High power flat-packaged RC-IGBT). 299-302. Paper presented at Proceedings of the 1996 IEEE 8th International Symposium on Power Semiconductor Devices and ICs, Maui, HI, USA, .