2.5 kV-1000 A Power Pack IGBT (High power flat-packaged RC-IGBT)

Yoshikazu Takahashi; Koh Yoshikawa; Masayuki Soutome; Takeshi Fujii; Masami Ichijyou; Yasukazu Seki

2.5 kV-1000 A Power Pack IGBT (High power flat-packaged RC-IGBT)

Yoshikazu Takahashi, Koh Yoshikawa, Masayuki Soutome, Takeshi Fujii, Masami Ichijyou, Yasukazu Seki

Research output: Contribution to conference › Paper › peer-review

Abstract

A 2.5 kV-1000 A Power Pack IGBT has been successfully developed. This Power Pack IGBT is specially designed for the high power and highly reliable industrial and traction use. Compared with conventional IGBT modules, this Power Pack IGBT is simple and compact for a 2.5 kV-1 kA class device because the assembled IGBT and FWD chips are able to shrink due to the low thermal impedance of both side cooling. The Power Pack IGBT shows the high blocking voltage of 2.5 kV, the maximum on-state voltage of 4.5 V at the collector current I_C = 1000 A, T_j = 125 °C, and the turn-off capability of over 5×I_C.

Original language	English
Pages	299-302
Number of pages	4
Publication status	Published - 1996
Externally published	Yes
Event	Proceedings of the 1996 IEEE 8th International Symposium on Power Semiconductor Devices and ICs - Maui, HI, USA Duration: 1996 May 20 → 1996 May 23

Other

Other	Proceedings of the 1996 IEEE 8th International Symposium on Power Semiconductor Devices and ICs
City	Maui, HI, USA
Period	96/5/20 → 96/5/23

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

@conference{a6c5716c740849388a47c7cc3fbacf4b,

title = "2.5 kV-1000 A Power Pack IGBT (High power flat-packaged RC-IGBT)",

abstract = "A 2.5 kV-1000 A Power Pack IGBT has been successfully developed. This Power Pack IGBT is specially designed for the high power and highly reliable industrial and traction use. Compared with conventional IGBT modules, this Power Pack IGBT is simple and compact for a 2.5 kV-1 kA class device because the assembled IGBT and FWD chips are able to shrink due to the low thermal impedance of both side cooling. The Power Pack IGBT shows the high blocking voltage of 2.5 kV, the maximum on-state voltage of 4.5 V at the collector current IC = 1000 A, Tj = 125 °C, and the turn-off capability of over 5×IC.",

author = "Yoshikazu Takahashi and Koh Yoshikawa and Masayuki Soutome and Takeshi Fujii and Masami Ichijyou and Yasukazu Seki",

year = "1996",

language = "English",

pages = "299--302",

note = "Proceedings of the 1996 IEEE 8th International Symposium on Power Semiconductor Devices and ICs ; Conference date: 20-05-1996 Through 23-05-1996",

}

TY - CONF

T1 - 2.5 kV-1000 A Power Pack IGBT (High power flat-packaged RC-IGBT)

AU - Takahashi, Yoshikazu

AU - Yoshikawa, Koh

AU - Soutome, Masayuki

AU - Fujii, Takeshi

AU - Ichijyou, Masami

AU - Seki, Yasukazu

PY - 1996

Y1 - 1996

N2 - A 2.5 kV-1000 A Power Pack IGBT has been successfully developed. This Power Pack IGBT is specially designed for the high power and highly reliable industrial and traction use. Compared with conventional IGBT modules, this Power Pack IGBT is simple and compact for a 2.5 kV-1 kA class device because the assembled IGBT and FWD chips are able to shrink due to the low thermal impedance of both side cooling. The Power Pack IGBT shows the high blocking voltage of 2.5 kV, the maximum on-state voltage of 4.5 V at the collector current IC = 1000 A, Tj = 125 °C, and the turn-off capability of over 5×IC.

AB - A 2.5 kV-1000 A Power Pack IGBT has been successfully developed. This Power Pack IGBT is specially designed for the high power and highly reliable industrial and traction use. Compared with conventional IGBT modules, this Power Pack IGBT is simple and compact for a 2.5 kV-1 kA class device because the assembled IGBT and FWD chips are able to shrink due to the low thermal impedance of both side cooling. The Power Pack IGBT shows the high blocking voltage of 2.5 kV, the maximum on-state voltage of 4.5 V at the collector current IC = 1000 A, Tj = 125 °C, and the turn-off capability of over 5×IC.

UR - http://www.scopus.com/inward/record.url?scp=0029706469&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029706469&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0029706469

SP - 299

EP - 302

T2 - Proceedings of the 1996 IEEE 8th International Symposium on Power Semiconductor Devices and ICs

Y2 - 20 May 1996 through 23 May 1996

ER -

2.5 kV-1000 A Power Pack IGBT (High power flat-packaged RC-IGBT)

Abstract

Other

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this