2.5 kV-1000 a Power Pack IGBT (high power flat-packaged NPT Type RC-IGBT)

Yoshikazu Takahashi, Koh Yoshikawa, Masayuki Soutome, Takeshi Fujii, Humiaki Kirihata, Yasukazu Seki

Research output: Contribution to journalArticlepeer-review

28 Citations (Scopus)

Abstract

A 2.5 kV-1000 A power pack IGBT (flat-packaged reverse conducting IGBT) has been developed using NPT (nonpunchthrough) IGBT chip technology, the gate-source repair technology, the parallel connection technology with no oscillation and the multi-chip assembly technology. The power pack IGBT is specially designed for high power and highly reliable industrial and traction applications. Compared with conventional IGBT modules, this power pack IGBT has high reliability by use of a hermetic package and a press contact structure. In addition to the high reliability, this power pack IGBT is simple and compact for a 2.5 kV-1 kA class device because the assembled IGBT and FWD chips are able to shrink due to the low thermal impedance of both side cooling. The power pack IGBT shows the high blocking voltage of 2.5 kV, the typical saturation voltage of 4.2 V at the collector current (Ic) of 1000 A, the junction temperature (Tj) of 125 °C, and the turnoff capability of over 3 x Ic-

Original languageEnglish
Pages (from-to)245-250
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume46
Issue number1
DOIs
Publication statusPublished - 1999
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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