2.5 kV-100 a flat-packaged IGBT (micro-stack IGBT)

Yoshikazu Takahashi; Takeharu Koga; Humiaki Kirihata; Yasukazu Seki

doi:10.1109/16.544421

2.5 kV-100 a flat-packaged IGBT (micro-stack IGBT)

Yoshikazu Takahashi, Takeharu Koga, Humiaki Kirihata, Yasukazu Seki

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

A 2.5 kV-100 A flat-packaged IGBT (micro-stack IGBT) has been developed. This is the first work to demonstrate the possibility of a high-voltage, high-current, and highly reliable flat-packaged MOS controlled device. The 20-mm square chip is press-contacted with an emitter electrode having four rectangular p-base regions on which the MOS gate is not arranged. The great advantage of this structure is the double side cooling and the emitter wire bondingless. The micro-stack IGBT shows the high-blocking voltage of 2.5 kV, the typical on-state voltage of 3.5 V at the collector current I_c = 100 A, the turn-off capability of 8 × I_c, and the good pressure contact for the electrical and thermal characteristics in the range from 2 to 8 kN/chip.

Original language	English
Pages (from-to)	2276-2282
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	43
Issue number	12
DOIs	https://doi.org/10.1109/16.544421
Publication status	Published - 1996
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/16.544421

Cite this

@article{ba2290c9b93e469b8153d2a8f5f49f1e,

title = "2.5 kV-100 a flat-packaged IGBT (micro-stack IGBT)",

abstract = "A 2.5 kV-100 A flat-packaged IGBT (micro-stack IGBT) has been developed. This is the first work to demonstrate the possibility of a high-voltage, high-current, and highly reliable flat-packaged MOS controlled device. The 20-mm square chip is press-contacted with an emitter electrode having four rectangular p-base regions on which the MOS gate is not arranged. The great advantage of this structure is the double side cooling and the emitter wire bondingless. The micro-stack IGBT shows the high-blocking voltage of 2.5 kV, the typical on-state voltage of 3.5 V at the collector current Ic = 100 A, the turn-off capability of 8 × Ic, and the good pressure contact for the electrical and thermal characteristics in the range from 2 to 8 kN/chip.",

author = "Yoshikazu Takahashi and Takeharu Koga and Humiaki Kirihata and Yasukazu Seki",

year = "1996",

doi = "10.1109/16.544421",

language = "English",

volume = "43",

pages = "2276--2282",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - 2.5 kV-100 a flat-packaged IGBT (micro-stack IGBT)

AU - Takahashi, Yoshikazu

AU - Koga, Takeharu

AU - Kirihata, Humiaki

AU - Seki, Yasukazu

PY - 1996

Y1 - 1996

N2 - A 2.5 kV-100 A flat-packaged IGBT (micro-stack IGBT) has been developed. This is the first work to demonstrate the possibility of a high-voltage, high-current, and highly reliable flat-packaged MOS controlled device. The 20-mm square chip is press-contacted with an emitter electrode having four rectangular p-base regions on which the MOS gate is not arranged. The great advantage of this structure is the double side cooling and the emitter wire bondingless. The micro-stack IGBT shows the high-blocking voltage of 2.5 kV, the typical on-state voltage of 3.5 V at the collector current Ic = 100 A, the turn-off capability of 8 × Ic, and the good pressure contact for the electrical and thermal characteristics in the range from 2 to 8 kN/chip.

AB - A 2.5 kV-100 A flat-packaged IGBT (micro-stack IGBT) has been developed. This is the first work to demonstrate the possibility of a high-voltage, high-current, and highly reliable flat-packaged MOS controlled device. The 20-mm square chip is press-contacted with an emitter electrode having four rectangular p-base regions on which the MOS gate is not arranged. The great advantage of this structure is the double side cooling and the emitter wire bondingless. The micro-stack IGBT shows the high-blocking voltage of 2.5 kV, the typical on-state voltage of 3.5 V at the collector current Ic = 100 A, the turn-off capability of 8 × Ic, and the good pressure contact for the electrical and thermal characteristics in the range from 2 to 8 kN/chip.

UR - http://www.scopus.com/inward/record.url?scp=0030378257&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030378257&partnerID=8YFLogxK

U2 - 10.1109/16.544421

DO - 10.1109/16.544421

M3 - Article

AN - SCOPUS:0030378257

SN - 0018-9383

VL - 43

SP - 2276

EP - 2282

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 12

ER -

2.5 kV-100 a flat-packaged IGBT (micro-stack IGBT)

Abstract

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