A 2.5 kV-100 A flat-packaged IGBT (micro-stack IGBT) has been developed. This is the first work to demonstrate the possibility of a high-voltage, high-current, and highly reliable flat-packaged MOS controlled device. The 20-mm square chip is press-contacted with an emitter electrode having four rectangular p-base regions on which the MOS gate is not arranged. The great advantage of this structure is the double side cooling and the emitter wire bondingless. The micro-stack IGBT shows the high-blocking voltage of 2.5 kV, the typical on-state voltage of 3.5 V at the collector current Ic = 100 A, the turn-off capability of 8 × Ic, and the good pressure contact for the electrical and thermal characteristics in the range from 2 to 8 kN/chip.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering