24.8dBm power handling 60GHz Transmit/Receive switch using series and shunt FETs in 90nm Si-CMOS process

Shoichi Tanifuji, Noriharu Suematsu, Suguru Kameda, Tadashi Takagi, Kazuo Tsubouchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

90 nm Si-CMOS high power handling Transmit/Receive (T/R) Switch is proposed for 60 GHz wireless applications. By adopting series and shunt FETs circuit configuration and by employing large FET gate width of 320 μm, high transmit power handling capability is achieved. Since the use of large FET gate width degrades the insertion loss and isolation in the receive mode, a microstrip line is connected between the source and drain to make resonance with C off of the FET at 60 GHz in off-state. Simulated result shows that the designed T/R switch has over 1 W transmit power handling capability at 60 GHz. Fabricated results show the linear transfer characteristics up to 24.8 dBm at 60 GHz and 36.5 dBm at 36 GHz in transmit mode. Both upper limits comes from the limitation of measurement setup and we expect that this T/R switch has over 1 W power handling at 60 GHz.

Original languageEnglish
Title of host publicationEuropean Microwave Week 2011
Subtitle of host publication"Wave to the Future", EuMW 2011, Conference Proceedings - 6th European Microwave Integrated Circuit Conference, EuMIC 2011
Pages216-219
Number of pages4
Publication statusPublished - 2011 Dec 1
Event14th European Microwave Week 2011: "Wave to the Future", EuMW 2011 - 6th European Microwave Integrated Circuit Conference, EuMIC 2011 - Manchester, United Kingdom
Duration: 2011 Oct 102011 Oct 11

Publication series

NameEuropean Microwave Week 2011: "Wave to the Future", EuMW 2011, Conference Proceedings - 6th European Microwave Integrated Circuit Conference, EuMIC 2011

Other

Other14th European Microwave Week 2011: "Wave to the Future", EuMW 2011 - 6th European Microwave Integrated Circuit Conference, EuMIC 2011
CountryUnited Kingdom
CityManchester
Period11/10/1011/10/11

Keywords

  • 60 GHz
  • 90 nm
  • Si-CMOS
  • Transmit/Receive (T/R) switch
  • millimeter wave devices

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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