21.5dBm Power-Handling 5GHz Transmit/Receive CMOS Switch Realized by Voltage Division Effect of Stacked Transistor Configuration with Depletion-Layer-Extended Transistors (DETs)

Takahiro Ohnakado, Satoshi Yamakawa, Takaaki Murakami, Akihiko Furukawa, Eiji Taniguchi, Hiro Omi Ueda, Noriharu Suematsu, Tatsuo Oomori

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

This paper reports for the first time an over-20dBm power-handling 5GHz transmit/receive (T/R) CMOS switch. The Depletion-layer-Extended Transistor (DET), which possesses high effective substrate resistance, enables the voltage division effect of the stacked transistor configuration to work in CMOS, thus realizing this high power-handling capability. Furthermore, despite insertion-loss (IL) degradation due to double on-resistance with the stacked transistor configuration, a receive-mode IL (I L@RX) of as low as 1.44dB at 5GHz is accomplished with the benefit of the IL improvement effects in the DET, in addition to a very low transmit-mode IL (IL@TX) of 0.95dB at 5GHz.

Original languageEnglish
Pages25-28
Number of pages4
Publication statusPublished - 2003 Oct 2
Externally publishedYes
Event2003 Symposium on VLSI Circuits - Kyoto, Japan
Duration: 2003 Jun 122003 Jun 14

Other

Other2003 Symposium on VLSI Circuits
CountryJapan
CityKyoto
Period03/6/1203/6/14

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    Ohnakado, T., Yamakawa, S., Murakami, T., Furukawa, A., Taniguchi, E., Ueda, H. O., Suematsu, N., & Oomori, T. (2003). 21.5dBm Power-Handling 5GHz Transmit/Receive CMOS Switch Realized by Voltage Division Effect of Stacked Transistor Configuration with Depletion-Layer-Extended Transistors (DETs). 25-28. Paper presented at 2003 Symposium on VLSI Circuits, Kyoto, Japan.