21.5-dBm Power-Handling 5-GHz Transmit/Receive CMOS Switch Realized by Voltage Division Effect of Stacked Transistor Configuration With Depletion-Layer-Extended Transistors (DETs)

Takahiro Ohnakado, Satoshi Yamakawa, Takaaki Murakami, Akihiko Furukawa, Eiji Taniguchi, Hiro Omi Ueda, Noriharu Suematsu, Tatsuo Oomori

Research output: Contribution to journalArticle

55 Citations (Scopus)

Abstract

This paper reports a 21.5-dBm power-handling 5-GHz transmit/receive CMOS switch utilizing the depletion-layer-extended transistor (DET), which possesses high effective substrate resistance and enables the voltage division effect of the stacked transistor configuration to work in the CMOS switch. Furthermore, low insertion losses of 0.95 and 1.44 dB are accomplished at 5 GHz in the transmit and receive modes, respectively, with the benefit of the insertion-loss improvement effects in the DET. At the same time, high isolations of more than 22 dB were obtained at 5 GHz in the transmit and receive modes with the adoption of the shunt/series type circuit.

Original languageEnglish
Pages (from-to)577-584
Number of pages8
JournalIEEE Journal of Solid-State Circuits
Volume39
Issue number4
DOIs
Publication statusPublished - 2004 Apr 1
Externally publishedYes

Keywords

  • CMOS integrated circuits
  • MOSFETS
  • Microwave circuits
  • Microwave devices
  • Switches

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of '21.5-dBm Power-Handling 5-GHz Transmit/Receive CMOS Switch Realized by Voltage Division Effect of Stacked Transistor Configuration With Depletion-Layer-Extended Transistors (DETs)'. Together they form a unique fingerprint.

  • Cite this