(211)-oriented domain formation during growth of ZnTe on m-plane sapphire by MBE

Taizo Nakasu, Masakazu Kobayashi, Hiroyoshi Togo, Toshiaki Asahi

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

ZnTe epilayers have been grown on 2°-tilted m-plane 10 1 ̄ 0 sapphire substrates by molecular beam epitaxy. Pole figure imaging was used to study the domain distribution within the layer, and the pole figures of 111, 220, 004, and 422 ZnTe and 30 3 ̄ 0 sapphire were measured. Computer simulation was used to analyze the symmetry of the diffraction patterns seen in the pole figure images. Stereographic projections were also compared with the pole figures of 422 and 211 ZnTe, confirming that single-domain (211)-oriented ZnTe epilayers had been grown on the 2°-tilted m-plane sapphire substrates. Although differences in crystal structure and lattice mismatch were severe in these heterostructures, precise control of the substrate surface's lattice arrangement would result in the formation of high-quality epitaxial layers.

Original languageEnglish
Pages (from-to)921-925
Number of pages5
JournalJournal of Electronic Materials
Volume43
Issue number4
DOIs
Publication statusPublished - 2014 Jan 1
Externally publishedYes

Keywords

  • Molecular beam epitaxy
  • pole figure
  • sapphire
  • x-ray diffraction
  • zinc telluride

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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