TY - GEN
T1 - 20-nm magnetic domain wall motion memory with ultralow-power operation
AU - Fukami, S.
AU - Yamanouchi, M.
AU - Kim, K. J.
AU - Suzuki, T.
AU - Sakimura, N.
AU - Chiba, D.
AU - Ikeda, S.
AU - Sugibayashi, T.
AU - Kasai, N.
AU - Ono, T.
AU - Ohno, H.
PY - 2013
Y1 - 2013
N2 - We study the write and retention properties of magnetic domain wall (DW)-motion memory devices with the dimensions down to 20 nm. We find that the write current and time are scaled along with device size while sufficient thermal stability and low error rate are maintained. As a result, ultralow-power (a few fJ) and reliable operation is possible even at reduced dimensions.
AB - We study the write and retention properties of magnetic domain wall (DW)-motion memory devices with the dimensions down to 20 nm. We find that the write current and time are scaled along with device size while sufficient thermal stability and low error rate are maintained. As a result, ultralow-power (a few fJ) and reliable operation is possible even at reduced dimensions.
UR - http://www.scopus.com/inward/record.url?scp=84894296975&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84894296975&partnerID=8YFLogxK
U2 - 10.1109/IEDM.2013.6724553
DO - 10.1109/IEDM.2013.6724553
M3 - Conference contribution
AN - SCOPUS:84894296975
SN - 9781479923076
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 3.5.1-3.5.4
BT - 2013 IEEE International Electron Devices Meeting, IEDM 2013
T2 - 2013 IEEE International Electron Devices Meeting, IEDM 2013
Y2 - 9 December 2013 through 11 December 2013
ER -