20-nm magnetic domain wall motion memory with ultralow-power operation

S. Fukami, M. Yamanouchi, K. J. Kim, T. Suzuki, N. Sakimura, D. Chiba, S. Ikeda, T. Sugibayashi, N. Kasai, T. Ono, H. Ohno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

21 Citations (Scopus)

Abstract

We study the write and retention properties of magnetic domain wall (DW)-motion memory devices with the dimensions down to 20 nm. We find that the write current and time are scaled along with device size while sufficient thermal stability and low error rate are maintained. As a result, ultralow-power (a few fJ) and reliable operation is possible even at reduced dimensions.

Original languageEnglish
Title of host publication2013 IEEE International Electron Devices Meeting, IEDM 2013
Pages3.5.1-3.5.4
DOIs
Publication statusPublished - 2013
Event2013 IEEE International Electron Devices Meeting, IEDM 2013 - Washington, DC, United States
Duration: 2013 Dec 92013 Dec 11

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2013 IEEE International Electron Devices Meeting, IEDM 2013
CountryUnited States
CityWashington, DC
Period13/12/913/12/11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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