2-V operated flexible vertical organic transistor with good air stability and bias stress reliability

Kuan Min Huang, Hung Cheng Lin, Kazuaki Kawashima, Itaru Osaka, Hsiao Wen Zan, Hsin Fei Meng, Kazuo Takimiya

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

In this work, we demonstrated a vertical organic transistor using air-stable material to exhibit good lifetime, good bias-stress reliability, and low operation voltage on a flexible plastic substrate in air ambient. With a synthesized NTz-based semiconducting polymer, the proposed space-charge-limited transistor (SCLT) delivers high on-off current ratio of 160000 and high output current density of 10 mA/cm2 at about 2 V. Without encapsulation, the proposed transistor keeps stable current-voltage relationship for 180 days and has only 0.1 V threshold voltage shift after 5000 s bias stress. No significant degradation can be observed after 1000-times bending and a maximum gain of 14 can be obtained when connecting the flexible transistor with a resistor to form an inverter.

Original languageEnglish
Pages (from-to)325-330
Number of pages6
JournalOrganic Electronics
Volume50
DOIs
Publication statusPublished - 2017 Nov 1
Externally publishedYes

Keywords

  • Air stability
  • Flexible
  • Low voltage operating
  • Vertical organic transistor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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