2 MeV e-irradiation UHVEM study on the impact of O and Ge doping on {113}-defect formation in Si

J. Vanhellemont, H. Yasuda, Y. Tokumoto, Y. Ohno, M. Suezawa, I. Yonenaga

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

First results are presented of a study on the impact of O and Ge doping on {113}-defect formation in Si using in situ 2 MeV e-irradiation in a high voltage electron microscope. Comparison with undoped Si, reveals a suppression of {113}-defect formation due to O and Ge. The observations are discussed in the frame of a theoretical model assuming quasi-chemical reactions to describe the intrinsic point defect behaviour during irradiation as a function of irradiation temperature and specimen thickness. It is shown that for irradiations at high temperatures, intrinsic point defect diffusivity values derived from crystal growth and metal diffusion experiments can be used to explain the observations semi-quantitatively.

Original languageEnglish
Pages (from-to)1902-1907
Number of pages6
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume209
Issue number10
DOIs
Publication statusPublished - 2012 Oct

Keywords

  • Ge
  • Si
  • UHVEM
  • in situ irradiation
  • oxygen
  • {113}-defect

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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