2 Mb SPRAM (SPin-Transfer Torque RAM) With Bit-by-Bit Bi-Directional Current Write and Parallelizing-Direction Current Read

Takayuki Kawahara, Riichiro Takemura, Katsuya Miura, Jun Hayakawa, Shoji Ikeda, Young Min Lee, Ryutaro Sasaki, Yasushi Goto, Kenchi Ito, Toshiyasu Meguro, Fumihiro Matsukura, Hiromasa Takahashi, Hideyuki Matsuoka, Hideo Ohno

Research output: Contribution to journalArticlepeer-review

198 Citations (Scopus)

Abstract

A 1.8 V 2 Mb SPin-transfer torque RAM (SPRAM) chip using a 0.2 μm logic process with an MgO tunneling barrier cell demonstrates the circuit technologies for potential low-power nonvolatile RAM, or universal memory. This chip features an array scheme with bit-by-bit bi-directional current writing to achieve proper spin-transfer torque writing of 100 ns, and parallelizing-direction current reading with a low-voltage bit-line for preventing read disturbances that lead to 40 ns access time.

Original languageEnglish
Pages (from-to)109-120
Number of pages12
JournalIEEE Journal of Solid-State Circuits
Volume43
Issue number1
DOIs
Publication statusPublished - 2008 Jan

Keywords

  • Bi-directional current write parallelizing direction current read
  • TMR
  • low-power RAM
  • nonvolatile RAM
  • spin-transfer torque
  • universal memory

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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