2. 5 KV-2000 A MONOLITHIC REVERSE CONDUCTING GATE TURN-OFF THYRISTOR.

Osamu Hashimoto, Yoshikazu Takahashi, Masahide Watanabe, Osamu Yamada, Tatsuhiko Fujihira

Research output: Contribution to journalConference article

Abstract

A 2. 5-kV-2000-A monolithic reverse conducting gate turn-off thyristor (RC-GTO) has been developed by use of a precise lifetime control technique, a precise gate-etching control technique, and an electrical separation technique between the GTO part and the diode part. A high separation resistance of 100-150 ohms is attained by applying a double diffused profile. An investigation, by use of computer simulation and an image converter camera, has supported the development of the 2. 5-kV-2000-A RC-GTO.

Original languageEnglish
Pages (from-to)388-392
Number of pages5
JournalConference Record - IAS Annual Meeting (IEEE Industry Applications Society)
Publication statusPublished - 1986 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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