A 2. 5-kV-2000-A monolithic reverse conducting gate turn-off thyristor (RC-GTO) has been developed by use of a precise lifetime control technique, a precise gate-etching control technique, and an electrical separation technique between the GTO part and the diode part. A high separation resistance of 100-150 ohms is attained by applying a double diffused profile. An investigation, by use of computer simulation and an image converter camera, has supported the development of the 2. 5-kV-2000-A RC-GTO.
|Number of pages||5|
|Journal||Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)|
|Publication status||Published - 1986|
ASJC Scopus subject areas
- Control and Systems Engineering
- Industrial and Manufacturing Engineering
- Electrical and Electronic Engineering