1T1MTJ STT-MRAM Cell Array Design with an Adaptive Reference Voltage Generator for Improving Device Variation Tolerance

Hiroki Koike, Sadahiko Miura, Hiroaki Honjo, Tosinari Watanabe, Hideo Sato, Soshi Sato, Takashi Nasuno, Yasuo Noguchi, Mitsuo Yasuhira, Takaho Tanigawa, Masakazu Muraguchi, Masaaki Niwa, Kenchi Ito, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Citations (Scopus)

Abstract

A device-variation-tolerant spin-transfer-torque magnetic random access memory (STT-MRAM) cell array design with a high-signal-margin reference generator circuit was developed to create high-density 1T1MTJ STT-MRAMs. To realize an appropriate STT-MRAM design, fluctuations in the memory cell characteristics were first measured using a 1-kbit STT-MRAM test chip. Based on these measurements, a reference generator and an STT-MRAM cell array architecture were proposed. This cell array was evaluated in terms of the signal margin for read operation and its tolerance to device variation by means of Monte-Carlo SPICE circuit simulations. The proposed design enables a 50% improvement in the signal margin compared with the conventional cell array circuit.

Original languageEnglish
Title of host publication2015 IEEE 7th International Memory Workshop, IMW 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781467369312
DOIs
Publication statusPublished - 2015 Jul 2
Event2015 7th IEEE International Memory Workshop, IMW 2015 - Monterey, United States
Duration: 2015 May 172015 May 20

Publication series

Name2015 IEEE 7th International Memory Workshop, IMW 2015

Other

Other2015 7th IEEE International Memory Workshop, IMW 2015
Country/TerritoryUnited States
CityMonterey
Period15/5/1715/5/20

Keywords

  • Monte-Carlo simulation
  • STT-MRAM
  • array
  • reference
  • sense amplifier

ASJC Scopus subject areas

  • Hardware and Architecture
  • Software
  • Electrical and Electronic Engineering
  • Computer Science Applications

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