1T-1MTJ Type Embedded STT-MRAM with Advanced Low-Damage and Short-Failure-Free RIE Technology down to 32 nmφ MTJ Patterning

Hideo Sato, Toshinari Watanabe, Hiroki Koike, Takashi Saito, Sadahiko Miura, Hiroaki Honjo, Hirofumi Inoue, Shoji Ikeda, Yasuo Noguchi, Takaho Tanigawa, Mitsuo Yasuhira, Hideo Ohno, Song Yun Kang, Takuya Kubo, Koichi Takatsuki, Koji Yamashita, Yasushi Yagi, Ryo Tamura, Takuro Nishimura, Koh MurataTetsuo Endoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

We have successfully developed advanced low-damage and short-failure-free RIE technology under 300 mm process down to 32 nmφ MTJ patterning. By using the developed RIE technology, we have achieved significant improvement in TMR ratio, coercivity, thermal stability factor, and the ratio of thermal stability factor to intrinsic critical current compared to those using conventional RIE technology. By using our advanced RIE technology, we also fabricated 1T-1MTJ type embedded 2Mb-STT-MRAM chips with the 61 nmφ-perpendicular-MTJs using the double-MgO free layer under 90 nm CMOS-MTJ hybrid 300 mm process. Advantage of our advanced RIE technology has been demonstrated with their high yield and excellent shmoo plot. The STT-MRAM technology with high-performance MTJ using low-damage RIE patterning process contributes to future high-density embedded STT-MRAM.

Original languageEnglish
Title of host publication2018 IEEE 10th International Memory Workshop, IMW 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-4
Number of pages4
ISBN (Electronic)9781538652473
DOIs
Publication statusPublished - 2018 Jun 19
Event10th IEEE International Memory Workshop, IMW 2018 - Kyoto, Japan
Duration: 2018 May 132018 May 16

Publication series

Name2018 IEEE 10th International Memory Workshop, IMW 2018

Other

Other10th IEEE International Memory Workshop, IMW 2018
Country/TerritoryJapan
CityKyoto
Period18/5/1318/5/16

Keywords

  • CoFeB-MgO
  • RIE
  • STT-MRAM
  • switching efficiency
  • thermal stability factor
  • tunnel magnetoresistance ratio

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electronic, Optical and Magnetic Materials

Fingerprint

Dive into the research topics of '1T-1MTJ Type Embedded STT-MRAM with Advanced Low-Damage and Short-Failure-Free RIE Technology down to 32 nmφ MTJ Patterning'. Together they form a unique fingerprint.

Cite this