1/f Noise of accumulation mode p- and n-MOSFETs

Philippe Gaubert, Akinobu Teramoto, Tadahiro Ohmi, Shigetoshi Sugawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The noise of inversion and accumulation mode MOSFETs has been compared and analysed in terms of doping concentration. For low doping concentration, both devices have similar noise levels. The increase of the doping concentration results in a degradation of the noise to the disadvantage of the accumulation mode n-MOSFETs while its level remains unchanged for the p-MOSFETs. A further increase leads to a drastic reduction of the noise in favour of both accumulation mode n- an p-MOSFETs on account of a change in the nature of the noise source.

Original languageEnglish
Title of host publication2013 22nd International Conference on Noise and Fluctuations, ICNF 2013
DOIs
Publication statusPublished - 2013 Sep 16
Event2013 22nd International Conference on Noise and Fluctuations, ICNF 2013 - Montpellier, France
Duration: 2013 Jun 242013 Jun 28

Publication series

Name2013 22nd International Conference on Noise and Fluctuations, ICNF 2013

Other

Other2013 22nd International Conference on Noise and Fluctuations, ICNF 2013
CountryFrance
CityMontpellier
Period13/6/2413/6/28

ASJC Scopus subject areas

  • Acoustics and Ultrasonics

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    Gaubert, P., Teramoto, A., Ohmi, T., & Sugawa, S. (2013). 1/f Noise of accumulation mode p- and n-MOSFETs. In 2013 22nd International Conference on Noise and Fluctuations, ICNF 2013 [6578879] (2013 22nd International Conference on Noise and Fluctuations, ICNF 2013). https://doi.org/10.1109/ICNF.2013.6578879