1/f noise degradation caused by Fowler-Nordheim tunneling stress in MOSFETs

M. Toita, S. Sugawa, A. Teramoto, T. Akaboshi, H. Imai, T. Ohmi

Research output: Contribution to journalConference article

Abstract

We focus on 1/f noise appears in MOSFETs. In wafer fabrication processes, plasma discharge is often used for etching, photoresist ashing, plasma enhanced CVD, and so on. After gate electrode formation, an electrical field higher than the device operation limit might be applied between the gate and substrate due to, so called, plasma damage. Such high field stress can result in a significant increase in low frequency noise in MOSFETs. The purpose of this work is to investigate in detail the degradation of 1/f noise levels caused by Fowler-Nordheim tunneling stress.

Original languageEnglish
Pages (from-to)313-317
Number of pages5
JournalAnnual Proceedings - Reliability Physics (Symposium)
Publication statusPublished - 2003 Jul 21
Event2003 IEEE International Reliability Physics Symposium Proceedings - Dallas, TX, United States
Duration: 2003 Mar 302003 Apr 4

Keywords

  • 1/f noise
  • Border traps
  • Fowler-Nordheim tunneling
  • MOS FET
  • Plasma damage

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

Fingerprint Dive into the research topics of '1/f noise degradation caused by Fowler-Nordheim tunneling stress in MOSFETs'. Together they form a unique fingerprint.

  • Cite this