1/f channel noise at high drain current in MOS transistors

P. Gaubert, A. Teramoto, T. Ohmi

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

On account of low resistivity contacts and of a newly developed device, the investigation of the 1/f noise at high drain current has been made possible. Therefore, it has been acknowledged that the correlated carrier number and mobility fluctuations model were not able to satisfactorily explain the 1/f noise within this particular region. Indeed, the fundamental mobility fluctuations were also generating 1/f fluctuations and were furthermore, taking over at high biases. It eventually came to light that the fundamental mobility fluctuations along with the sole oxide charge fluctuations were accurately modeling the noise all over the measurement range, allowing us to notice that the fundamental mobility fluctuations were generating the same amount of 1/f fluctuations as the induced mobility added to the cross correlated ones.

Original languageEnglish
Pages (from-to)431-445
Number of pages15
JournalFluctuation and Noise Letters
Volume10
Issue number4
DOIs
Publication statusPublished - 2011 Dec 1

Keywords

  • 1/f noise
  • MOS devices
  • MOSFET
  • charge carrier mobility
  • semiconductor device noise
  • series resistance noise

ASJC Scopus subject areas

  • Mathematics(all)
  • Physics and Astronomy(all)

Fingerprint

Dive into the research topics of '1/f channel noise at high drain current in MOS transistors'. Together they form a unique fingerprint.

Cite this