Abstract
The use of high resistive Si substrate, instead of conventional low resistive Si substrate, enables to reduce the loss of spiral inductor for on-chip matching circuit by 61% at 1.9GHz and by 78% at 5.8GHz, and to improve gain and noise performance of BJT. These improvements are explained as the reduction of dielectric loss of substrate by referring equivalent circuit model extraction. The fabricated 1.9GHz-band on-chip matching LNA performs 13.4dB gain, 1.9dB NF with 2V, 2mA d.c. power and 5.8GHz-band LNA performs 6.9 dB gain, 3.3 dB NF with 3V, 3mA d.c. power.
Original language | English |
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Pages (from-to) | 493-496 |
Number of pages | 4 |
Journal | IEEE MTT-S International Microwave Symposium Digest |
Volume | 2 |
Publication status | Published - 1999 Dec 1 |
Externally published | Yes |
Event | Proceedings of the 1999 IEEE MTT-S International Microwave Symposium Digest 'The Magic Touch of Microwaves' - Anaheim, CA, USA Duration: 1999 Jun 13 → 1999 Jun 19 |
ASJC Scopus subject areas
- Radiation
- Condensed Matter Physics
- Electrical and Electronic Engineering