1.9GHz/5.8GHz-band on-chip matching Si-MMIC low noise amplifiers fabricated on high resistive Si substrate

Masayoshi Ono; Noriharu Suematsu; Shunji Kubo; Yoshitada Iyama; Tadashi Takagi; Osami Ishida

1.9GHz/5.8GHz-band on-chip matching Si-MMIC low noise amplifiers fabricated on high resistive Si substrate

Masayoshi Ono, Noriharu Suematsu, Shunji Kubo, Yoshitada Iyama, Tadashi Takagi, Osami Ishida

Research output: Contribution to journal › Conference article › peer-review

Abstract

The use of high resistive Si substrate, instead of conventional low resistive Si substrate, enables to reduce the loss of spiral inductor for on-chip matching circuit by 61% at 1.9GHz and by 78% at 5.8GHz, and to improve gain and noise performance of BJT. These improvements are explained as the reduction of dielectric loss of substrate by referring equivalent circuit model extraction. The fabricated 1.9GHz-band on-chip matching LNA performs 13.4dB gain, 1.9dB NF with 2V, 2mA d.c. power and 5.8GHz-band LNA performs 6.9 dB gain, 3.3 dB NF with 3V, 3mA d.c. power.

Original language	English
Pages (from-to)	493-496
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
Volume	2
Publication status	Published - 1999 Dec 1
Externally published	Yes
Event	Proceedings of the 1999 IEEE MTT-S International Microwave Symposium Digest 'The Magic Touch of Microwaves' - Anaheim, CA, USA Duration: 1999 Jun 13 → 1999 Jun 19

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

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1.9GHz/5.8GHz-band on-chip matching Si-MMIC low noise amplifiers fabricated on high resistive Si substrate. / Ono, Masayoshi; Suematsu, Noriharu; Kubo, Shunji; Iyama, Yoshitada; Takagi, Tadashi; Ishida, Osami.

In: IEEE MTT-S International Microwave Symposium Digest, Vol. 2, 01.12.1999, p. 493-496.

Research output: Contribution to journal › Conference article › peer-review

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title = "1.9GHz/5.8GHz-band on-chip matching Si-MMIC low noise amplifiers fabricated on high resistive Si substrate",

abstract = "The use of high resistive Si substrate, instead of conventional low resistive Si substrate, enables to reduce the loss of spiral inductor for on-chip matching circuit by 61% at 1.9GHz and by 78% at 5.8GHz, and to improve gain and noise performance of BJT. These improvements are explained as the reduction of dielectric loss of substrate by referring equivalent circuit model extraction. The fabricated 1.9GHz-band on-chip matching LNA performs 13.4dB gain, 1.9dB NF with 2V, 2mA d.c. power and 5.8GHz-band LNA performs 6.9 dB gain, 3.3 dB NF with 3V, 3mA d.c. power.",

author = "Masayoshi Ono and Noriharu Suematsu and Shunji Kubo and Yoshitada Iyama and Tadashi Takagi and Osami Ishida",

year = "1999",

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journal = "IEEE MTT-S International Microwave Symposium Digest",

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T1 - 1.9GHz/5.8GHz-band on-chip matching Si-MMIC low noise amplifiers fabricated on high resistive Si substrate

AU - Ono, Masayoshi

AU - Suematsu, Noriharu

AU - Kubo, Shunji

AU - Iyama, Yoshitada

AU - Takagi, Tadashi

AU - Ishida, Osami

PY - 1999/12/1

Y1 - 1999/12/1

N2 - The use of high resistive Si substrate, instead of conventional low resistive Si substrate, enables to reduce the loss of spiral inductor for on-chip matching circuit by 61% at 1.9GHz and by 78% at 5.8GHz, and to improve gain and noise performance of BJT. These improvements are explained as the reduction of dielectric loss of substrate by referring equivalent circuit model extraction. The fabricated 1.9GHz-band on-chip matching LNA performs 13.4dB gain, 1.9dB NF with 2V, 2mA d.c. power and 5.8GHz-band LNA performs 6.9 dB gain, 3.3 dB NF with 3V, 3mA d.c. power.

AB - The use of high resistive Si substrate, instead of conventional low resistive Si substrate, enables to reduce the loss of spiral inductor for on-chip matching circuit by 61% at 1.9GHz and by 78% at 5.8GHz, and to improve gain and noise performance of BJT. These improvements are explained as the reduction of dielectric loss of substrate by referring equivalent circuit model extraction. The fabricated 1.9GHz-band on-chip matching LNA performs 13.4dB gain, 1.9dB NF with 2V, 2mA d.c. power and 5.8GHz-band LNA performs 6.9 dB gain, 3.3 dB NF with 3V, 3mA d.c. power.

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M3 - Conference article

AN - SCOPUS:0033365991

VL - 2

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EP - 496

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

SN - 0149-645X

T2 - Proceedings of the 1999 IEEE MTT-S International Microwave Symposium Digest 'The Magic Touch of Microwaves'

Y2 - 13 June 1999 through 19 June 1999

ER -

1.9GHz/5.8GHz-band on-chip matching Si-MMIC low noise amplifiers fabricated on high resistive Si substrate

Abstract

ASJC Scopus subject areas

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