1.9GHz/5.8GHz-band on-chip matching Si-MMIC low noise amplifiers fabricated on high resistive Si substrate

Masayoshi Ono, Noriharu Suematsu, Shunji Kubo, Yoshitada Iyama, Tadashi Takagi, Osami Ishida

Research output: Contribution to journalConference articlepeer-review

8 Citations (Scopus)

Abstract

The use of high resistive Si substrate, instead of conventional low resistive Si substrate, enables to reduce the loss of spiral inductor for on-chip matching circuit by 61% at 1.9GHz and by 78% at 5.8GHz, and to improve gain and noise performance of BJT. These improvements are explained as the reduction of dielectric loss of substrate by referring equivalent circuit model extraction. The fabricated 1.9GHz-band on-chip matching LNA performs 13.4dB gain, 1.9dB NF with 2V, 2mA d.c. power and 5.8GHz-band LNA performs 6.9 dB gain, 3.3 dB NF with 3V, 3mA d.c. power.

Original languageEnglish
Pages (from-to)493-496
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Volume2
Publication statusPublished - 1999 Dec 1
Externally publishedYes
EventProceedings of the 1999 IEEE MTT-S International Microwave Symposium Digest 'The Magic Touch of Microwaves' - Anaheim, CA, USA
Duration: 1999 Jun 131999 Jun 19

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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