1.9GHz/5.8GHz-band on-chip matching Si-MMIC low noise amplifiers fabricated on high resistive Si substrate

Masayoshi Ono, Noriharu Suematsu, Shunji Kubo, Yoshitada Iyama, Tadashi Takagi, Osami Ishida

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

The use of high resistive Si substrate, instead of conventional low resistive Si substrate, enables to reduce the loss of spiral inductor for on-chip matching circuit by 61% at 1.9GHz and by 78% at 5.8GHz, and to improve gain and noise performance of BJT. These improvements are explained as the reduction of dielectric loss of substrate by referring equivalent circuit model extraction. The fabricated 1.9GHz-band on-chip matching LNA performs 13.4dB gain, 1.9dB NF with 2V, 2mA d.c. power and 5.8GHz-band LNA performs 6.9 dB gain, 3.3 dB NF with 3V, 3mA d.c. power.

Original languageEnglish
Title of host publicationIEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers
PublisherIEEE
Pages189-192
Number of pages4
ISBN (Print)0780356047
Publication statusPublished - 1999 Jan 1
Externally publishedYes
EventProceedings of the 1999 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Anaheim, CA, USA
Duration: 1999 Jun 131999 Jun 15

Publication series

NameIEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers
ISSN (Print)1097-2633

Other

OtherProceedings of the 1999 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
CityAnaheim, CA, USA
Period99/6/1399/6/15

ASJC Scopus subject areas

  • Engineering(all)

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