190-GHz fT, 130-GHz fmax SiGe HBTs with heavily doped base formed by HCl-free selective epitaxy

Yukihiro Kiyota, Takashi Hashimoto, Tsutomu Udo, Akihiro Kodama, Hiromi Shimamoto, Reiko Hayami, Katsuyoshi Washio

Research output: Contribution to conferencePaper

7 Citations (Scopus)

Abstract

A heavily-boron-doped SiGe base was formed by HCl-free selective epitaxial growth using LPCVD. This HCl-free growth enabled us to obtain high growth rate at low temperature and to suppress surface roughening of heavily-boron-doped SiGe. HBTs were fabricated with base regions with high boron concentration, i. e. 2.4 × 1020 cm-3. An accurately and appropriately designed boron profile produced HBTs with fT of 190 and fmax of 130 GHz. By modifying the impurity profiles in the intrinsic region, fT was increased above 200 GHz. These high-performance HBTs were implemented in a multiplexer and a demultiplexer, and resulted in faster than S0-Gb/s performance.

Original languageEnglish
Pages139-142
Number of pages4
Publication statusPublished - 2002 Jan 1
Externally publishedYes
Event2002 IEEE Biopolar/BicMOS and Technology Meeting - Minneapolis, United States
Duration: 2002 Sep 292002 Oct 1

Other

Other2002 IEEE Biopolar/BicMOS and Technology Meeting
CountryUnited States
CityMinneapolis
Period02/9/2902/10/1

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Kiyota, Y., Hashimoto, T., Udo, T., Kodama, A., Shimamoto, H., Hayami, R., & Washio, K. (2002). 190-GHz fT, 130-GHz fmax SiGe HBTs with heavily doped base formed by HCl-free selective epitaxy. 139-142. Paper presented at 2002 IEEE Biopolar/BicMOS and Technology Meeting, Minneapolis, United States.