190-1100 nm Waveband multispectral imaging system using high light resistance wide dynamic range CMOS image sensor

Yasuyuki Fujihara; Satoshi Nasuno; Shunichi Wakashima; Yusuke Aoyagi; Rihito Kuroda; Shigetoshi Sugawa

doi:10.1109/ICSENS.2016.7808492

190-1100 nm Waveband multispectral imaging system using high light resistance wide dynamic range CMOS image sensor

Yasuyuki Fujihara, Satoshi Nasuno, Shunichi Wakashima, Yusuke Aoyagi, Rihito Kuroda, Shigetoshi Sugawa

ENG - Management Science and Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A 190-1100nm waveband multispectral imaging system is presented utilizing a high light resistance, wide dynamic range CMOS image sensor. The specially developed prototype image sensor exhibited 190-1100nm spectral sensitivity, 94dB wide dynamic range with 87ke^- full well capacity and 1200fps frame rate, and no degradation of light sensitivity and dark current was observed after strong UV-light irradiation stress. With the developed system, real-time multispectral imaging using UV-Visible-Near IR light waveband was successfully conducted.

Original language	English
Title of host publication	IEEE Sensors, SENSORS 2016 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479982875
DOIs	https://doi.org/10.1109/ICSENS.2016.7808492
Publication status	Published - 2017 Jan 5
Event	15th IEEE Sensors Conference, SENSORS 2016 - Orlando, United States Duration: 2016 Oct 30 → 2016 Nov 2

Other

Other	15th IEEE Sensors Conference, SENSORS 2016
Country	United States
City	Orlando
Period	16/10/30 → 16/11/2

Keywords

CMOS image sensor
Spectral imaging
UV-Visible-Near IR light waveband

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/ICSENS.2016.7808492

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190-1100 nm Waveband multispectral imaging system using high light resistance wide dynamic range CMOS image sensor. / Fujihara, Yasuyuki; Nasuno, Satoshi; Wakashima, Shunichi; Aoyagi, Yusuke; Kuroda, Rihito ; Sugawa, Shigetoshi.

IEEE Sensors, SENSORS 2016 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. 7808492.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Fujihara, Y, Nasuno, S, Wakashima, S, Aoyagi, Y, Kuroda, R & Sugawa, S 2017, 190-1100 nm Waveband multispectral imaging system using high light resistance wide dynamic range CMOS image sensor. in IEEE Sensors, SENSORS 2016 - Proceedings., 7808492, Institute of Electrical and Electronics Engineers Inc., 15th IEEE Sensors Conference, SENSORS 2016, Orlando, United States, 16/10/30. https://doi.org/10.1109/ICSENS.2016.7808492

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abstract = "A 190-1100nm waveband multispectral imaging system is presented utilizing a high light resistance, wide dynamic range CMOS image sensor. The specially developed prototype image sensor exhibited 190-1100nm spectral sensitivity, 94dB wide dynamic range with 87ke- full well capacity and 1200fps frame rate, and no degradation of light sensitivity and dark current was observed after strong UV-light irradiation stress. With the developed system, real-time multispectral imaging using UV-Visible-Near IR light waveband was successfully conducted.",

keywords = "CMOS image sensor, Spectral imaging, UV-Visible-Near IR light waveband",

author = "Yasuyuki Fujihara and Satoshi Nasuno and Shunichi Wakashima and Yusuke Aoyagi and Rihito Kuroda and Shigetoshi Sugawa",

year = "2017",

month = jan,

day = "5",

doi = "10.1109/ICSENS.2016.7808492",

language = "English",

booktitle = "IEEE Sensors, SENSORS 2016 - Proceedings",

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AU - Fujihara, Yasuyuki

AU - Nasuno, Satoshi

AU - Wakashima, Shunichi

AU - Aoyagi, Yusuke

AU - Kuroda, Rihito

AU - Sugawa, Shigetoshi

PY - 2017/1/5

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N2 - A 190-1100nm waveband multispectral imaging system is presented utilizing a high light resistance, wide dynamic range CMOS image sensor. The specially developed prototype image sensor exhibited 190-1100nm spectral sensitivity, 94dB wide dynamic range with 87ke- full well capacity and 1200fps frame rate, and no degradation of light sensitivity and dark current was observed after strong UV-light irradiation stress. With the developed system, real-time multispectral imaging using UV-Visible-Near IR light waveband was successfully conducted.

AB - A 190-1100nm waveband multispectral imaging system is presented utilizing a high light resistance, wide dynamic range CMOS image sensor. The specially developed prototype image sensor exhibited 190-1100nm spectral sensitivity, 94dB wide dynamic range with 87ke- full well capacity and 1200fps frame rate, and no degradation of light sensitivity and dark current was observed after strong UV-light irradiation stress. With the developed system, real-time multispectral imaging using UV-Visible-Near IR light waveband was successfully conducted.

KW - CMOS image sensor

KW - Spectral imaging

KW - UV-Visible-Near IR light waveband

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PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 15th IEEE Sensors Conference, SENSORS 2016

Y2 - 30 October 2016 through 2 November 2016

ER -

190-1100 nm Waveband multispectral imaging system using high light resistance wide dynamic range CMOS image sensor

Abstract

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Keywords

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