1.9 GHz single-chip RF front-end GaAs MMIC with low-distortion cascode FET mixer for personal handy-phone system terminals

Masatoshi Nakayama, Ken ichi Horiguchi, Kazuya Yamamoto, Yutaka Yoshii, Shigeru Sugiyama, Norihiro Suematsu, Tadashi Takagi

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

This paper describes new single-chip RF front-end GaAs MMIC for 1.9 GHz Japanese PHS handheld terminals. The IC consists of a high power amplifier, a T/R switch, a low noise amplifier, a newly developed low distortion cascode FET mixer and a negative voltage generator for FET gate bias voltage. The IC has high performance as RF front-end of terminals.

Original languageEnglish
Pages (from-to)171-174
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Volume1
Publication statusPublished - 1998 Jan 1
Externally publishedYes
EventProceedings of the 1998 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) - Baltimore, MD, USA
Duration: 1998 Jun 71998 Jun 12

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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