175% tunnel magnetoresistance at room temperature and high thermal stability using Co2FeAl0.5Si0.5 full-Heusler alloy electrodes

N. Tezuka, N. Ikeda, S. Sugimoto, K. Inomata

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Abstract

The authors have fabricated epitaxially grown spin-valve-type magnetic tunnel junctions with L 21 - Co2 Fe Al0.5 Si0.5 full-Heusler alloys for top and bottom electrodes and a MgO barrier. For MgO thickness tMgO =1.5 nm, tunnel magnetoresistance (TMR) ratio and resistance and area product (RA) initially increase up to around 350 °C and then decrease by annealing, while for tMgO =2.0 and 2.5 nm, the TMR ratio increases with annealing temperature and peaks around 500 °C. The TMR ratio up to 175% at RT and thermal stability up to 500 °C have been achieved for tMgO =2.0 nm, suggesting the large tunneling spin polarization and high thermal stability for Co2 Fe Al0.5 Si0.5 with L 21 structure.

Original languageEnglish
Article number252508
JournalApplied Physics Letters
Volume89
Issue number25
DOIs
Publication statusPublished - 2006 Dec 1

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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