1.55-μm VCSEL with polarization-independent HCG mirror on SOI

Yoshihiro Tsunemi; Nobuhide Yokota; Shota Majima; Kazuhiro Ikeda; Takeo Katayama; Hitoshi Kawaguchi

doi:10.1364/OE.21.028685

1.55-μm VCSEL with polarization-independent HCG mirror on SOI

Yoshihiro Tsunemi, Nobuhide Yokota, Shota Majima, Kazuhiro Ikeda, Takeo Katayama, Hitoshi Kawaguchi

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

We designed and fabricated a vertical-cavity surface-emitting laser (VCSEL) incorporating a polarization-independent high-indexcontrast subwavelength grating (HCG) mirror on silicon-on-insulator (SOI) for a novel polarization-bistable device on a silicon substrate. The VCSEL consists of the HCG mirror, an active layer with InGaAsP quantum wells having optical gain around 1.55 μm, and an Al_0.9Ga_0.1As/Al _0.16Ga_0.84As DBR. We used direct wafer bonding for the bonding between the active layer and the AlGaAs DBR, and benzocyclobutene (BCB) bonding for the bonding between the active layer and the polarization- independent HCG mirror. The reflectivity of the HCG embedded with BCB was measured, resulting in a 200-nm-high reflectivity band with reflectivity higher than 99% and a small polarization dependence of ± 1%. We achieved lasing of the fabricated HCG-VCSEL at 1527 nm under an optical short pulse excitation with an average power of 50 mW (~0.2 mJ/cm²) at 240 K.

Original language	English
Pages (from-to)	28685-28692
Number of pages	8
Journal	Optics Express
Volume	21
Issue number	23
DOIs	https://doi.org/10.1364/OE.21.028685
Publication status	Published - 2013 Nov 18
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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title = "1.55-μm VCSEL with polarization-independent HCG mirror on SOI",

abstract = "We designed and fabricated a vertical-cavity surface-emitting laser (VCSEL) incorporating a polarization-independent high-indexcontrast subwavelength grating (HCG) mirror on silicon-on-insulator (SOI) for a novel polarization-bistable device on a silicon substrate. The VCSEL consists of the HCG mirror, an active layer with InGaAsP quantum wells having optical gain around 1.55 μm, and an Al0.9Ga0.1As/Al 0.16Ga0.84As DBR. We used direct wafer bonding for the bonding between the active layer and the AlGaAs DBR, and benzocyclobutene (BCB) bonding for the bonding between the active layer and the polarization- independent HCG mirror. The reflectivity of the HCG embedded with BCB was measured, resulting in a 200-nm-high reflectivity band with reflectivity higher than 99% and a small polarization dependence of ± 1%. We achieved lasing of the fabricated HCG-VCSEL at 1527 nm under an optical short pulse excitation with an average power of 50 mW (~0.2 mJ/cm2) at 240 K.",

author = "Yoshihiro Tsunemi and Nobuhide Yokota and Shota Majima and Kazuhiro Ikeda and Takeo Katayama and Hitoshi Kawaguchi",

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AU - Tsunemi, Yoshihiro

AU - Yokota, Nobuhide

AU - Majima, Shota

AU - Ikeda, Kazuhiro

AU - Katayama, Takeo

AU - Kawaguchi, Hitoshi

PY - 2013/11/18

Y1 - 2013/11/18

N2 - We designed and fabricated a vertical-cavity surface-emitting laser (VCSEL) incorporating a polarization-independent high-indexcontrast subwavelength grating (HCG) mirror on silicon-on-insulator (SOI) for a novel polarization-bistable device on a silicon substrate. The VCSEL consists of the HCG mirror, an active layer with InGaAsP quantum wells having optical gain around 1.55 μm, and an Al0.9Ga0.1As/Al 0.16Ga0.84As DBR. We used direct wafer bonding for the bonding between the active layer and the AlGaAs DBR, and benzocyclobutene (BCB) bonding for the bonding between the active layer and the polarization- independent HCG mirror. The reflectivity of the HCG embedded with BCB was measured, resulting in a 200-nm-high reflectivity band with reflectivity higher than 99% and a small polarization dependence of ± 1%. We achieved lasing of the fabricated HCG-VCSEL at 1527 nm under an optical short pulse excitation with an average power of 50 mW (~0.2 mJ/cm2) at 240 K.

AB - We designed and fabricated a vertical-cavity surface-emitting laser (VCSEL) incorporating a polarization-independent high-indexcontrast subwavelength grating (HCG) mirror on silicon-on-insulator (SOI) for a novel polarization-bistable device on a silicon substrate. The VCSEL consists of the HCG mirror, an active layer with InGaAsP quantum wells having optical gain around 1.55 μm, and an Al0.9Ga0.1As/Al 0.16Ga0.84As DBR. We used direct wafer bonding for the bonding between the active layer and the AlGaAs DBR, and benzocyclobutene (BCB) bonding for the bonding between the active layer and the polarization- independent HCG mirror. The reflectivity of the HCG embedded with BCB was measured, resulting in a 200-nm-high reflectivity band with reflectivity higher than 99% and a small polarization dependence of ± 1%. We achieved lasing of the fabricated HCG-VCSEL at 1527 nm under an optical short pulse excitation with an average power of 50 mW (~0.2 mJ/cm2) at 240 K.

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1.55-μm VCSEL with polarization-independent HCG mirror on SOI

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