1.54 μm photoluminescence from Er:Ox centers at extremely low concentration in silicon at 300 K

Michele Celebrano, Lavinia Ghirardini, Marco Finazzi, Yasuo Shimizu, Yuan Tu, Koji Inoue, Yasuyoshi Nagai, Takahiro Shinada, Yuki Chiba, Ayman Abdelghafar, Maasa Yano, Takashi Tanii, Enrico Prati

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The demand for single photon emitters at λ = 1.54 μm, which follows from the consistent development of quantum networks based on optical fiber technologies, makes Er:Ox centers in Si a viable resource, thanks to the 4I13/24I15/2 optical transition of Er3+. While its implementation in high-power applications is hindered by the extremely low emission rate, the study of such systems in the low concentration regime remains relevant for quantum technologies. In this Letter, we explore the room-temperature photoluminescence at the telecomm wavelength from very low implantation doses of Er:Ox in Si. The lower-bound number of optically active Er atoms detected is of the order of 102, corresponding to a higher-bound value for the emission rate per individual ion of about 104 s−1.

Original languageEnglish
Pages (from-to)3311-3314
Number of pages4
JournalOptics Letters
Volume42
Issue number17
DOIs
Publication statusPublished - 2017 Sep 1

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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    Celebrano, M., Ghirardini, L., Finazzi, M., Shimizu, Y., Tu, Y., Inoue, K., Nagai, Y., Shinada, T., Chiba, Y., Abdelghafar, A., Yano, M., Tanii, T., & Prati, E. (2017). 1.54 μm photoluminescence from Er:Ox centers at extremely low concentration in silicon at 300 K. Optics Letters, 42(17), 3311-3314. https://doi.org/10.1364/OL.42.003311