1.5 μm PL fine structures and their extreme fast decay of crystalline ErSiO compounds

H. Isshiki; K. Masaki; K. Ueda; R. Saito; T. Kimura

1.5 μm PL fine structures and their extreme fast decay of crystalline ErSiO compounds

H. Isshiki, K. Masaki, K. Ueda, R. Saito, T. Kimura

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The Er-related 1.5 μm photoluminescence (PL) emissions with linewidth of less than 1meV and 10 μs lifetime in crystalline ErSiO superstructures was reported. The crystallization of ErSiO was induced by the high temperature (HT)-annealing above 1200°C. The PL decay curves of ErSiO were measured by time-gated photon counting. The decay time was 8.7 μs at 20K, which was two to three orders shorter than the decay time usually observed in Er-doped Si. The decay time decreases above 1200°C due to the crystallization and shows a strong and negative correlation with the peak intensity.

Original language	English
Title of host publication	2004 1st IEEE International Conference on Group IV Photonics
Pages	192-193
Number of pages	2
Publication status	Published - 2004 Dec 1
Externally published	Yes
Event	2004 1st IEEE International Conference on Group IV Photonics - Hong Kong, China, Hong Kong Duration: 2004 Sep 29 → 2004 Oct 1

Publication series

Name	2004 1st IEEE International Conference on Group IV Photonics

Other

Other	2004 1st IEEE International Conference on Group IV Photonics
Country	Hong Kong
City	Hong Kong, China
Period	04/9/29 → 04/10/1

ASJC Scopus subject areas

Engineering(all)

Access to Document

Fingerprint Dive into the research topics of '1.5 μm PL fine structures and their extreme fast decay of crystalline ErSiO compounds'. Together they form a unique fingerprint.

Cite this

1.5 μm PL fine structures and their extreme fast decay of crystalline ErSiO compounds. / Isshiki, H.; Masaki, K.; Ueda, K.; Saito, R.; Kimura, T.

2004 1st IEEE International Conference on Group IV Photonics. 2004. p. 192-193 (2004 1st IEEE International Conference on Group IV Photonics).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Isshiki, H, Masaki, K, Ueda, K, Saito, R & Kimura, T 2004, 1.5 μm PL fine structures and their extreme fast decay of crystalline ErSiO compounds. in 2004 1st IEEE International Conference on Group IV Photonics. 2004 1st IEEE International Conference on Group IV Photonics, pp. 192-193, 2004 1st IEEE International Conference on Group IV Photonics, Hong Kong, China, Hong Kong, 04/9/29.

@inproceedings{357937738502479e95ef24f337821b15,

title = "1.5 μm PL fine structures and their extreme fast decay of crystalline ErSiO compounds",

abstract = "The Er-related 1.5 μm photoluminescence (PL) emissions with linewidth of less than 1meV and 10 μs lifetime in crystalline ErSiO superstructures was reported. The crystallization of ErSiO was induced by the high temperature (HT)-annealing above 1200°C. The PL decay curves of ErSiO were measured by time-gated photon counting. The decay time was 8.7 μs at 20K, which was two to three orders shorter than the decay time usually observed in Er-doped Si. The decay time decreases above 1200°C due to the crystallization and shows a strong and negative correlation with the peak intensity.",

author = "H. Isshiki and K. Masaki and K. Ueda and R. Saito and T. Kimura",

year = "2004",

month = dec,

day = "1",

language = "English",

isbn = "0780384741",

series = "2004 1st IEEE International Conference on Group IV Photonics",

pages = "192--193",

booktitle = "2004 1st IEEE International Conference on Group IV Photonics",

note = "2004 1st IEEE International Conference on Group IV Photonics ; Conference date: 29-09-2004 Through 01-10-2004",

}

TY - GEN

T1 - 1.5 μm PL fine structures and their extreme fast decay of crystalline ErSiO compounds

AU - Isshiki, H.

AU - Masaki, K.

AU - Ueda, K.

AU - Saito, R.

AU - Kimura, T.

PY - 2004/12/1

Y1 - 2004/12/1

N2 - The Er-related 1.5 μm photoluminescence (PL) emissions with linewidth of less than 1meV and 10 μs lifetime in crystalline ErSiO superstructures was reported. The crystallization of ErSiO was induced by the high temperature (HT)-annealing above 1200°C. The PL decay curves of ErSiO were measured by time-gated photon counting. The decay time was 8.7 μs at 20K, which was two to three orders shorter than the decay time usually observed in Er-doped Si. The decay time decreases above 1200°C due to the crystallization and shows a strong and negative correlation with the peak intensity.

AB - The Er-related 1.5 μm photoluminescence (PL) emissions with linewidth of less than 1meV and 10 μs lifetime in crystalline ErSiO superstructures was reported. The crystallization of ErSiO was induced by the high temperature (HT)-annealing above 1200°C. The PL decay curves of ErSiO were measured by time-gated photon counting. The decay time was 8.7 μs at 20K, which was two to three orders shorter than the decay time usually observed in Er-doped Si. The decay time decreases above 1200°C due to the crystallization and shows a strong and negative correlation with the peak intensity.

UR - http://www.scopus.com/inward/record.url?scp=18844433576&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=18844433576&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:18844433576

SN - 0780384741

T3 - 2004 1st IEEE International Conference on Group IV Photonics

SP - 192

EP - 193

BT - 2004 1st IEEE International Conference on Group IV Photonics

T2 - 2004 1st IEEE International Conference on Group IV Photonics

Y2 - 29 September 2004 through 1 October 2004

ER -