1.5 μm PL fine structures and their extreme fast decay of crystalline ErSiO compounds

H. Isshiki, K. Masaki, K. Ueda, R. Saito, T. Kimura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The Er-related 1.5 μm photoluminescence (PL) emissions with linewidth of less than 1meV and 10 μs lifetime in crystalline ErSiO superstructures was reported. The crystallization of ErSiO was induced by the high temperature (HT)-annealing above 1200°C. The PL decay curves of ErSiO were measured by time-gated photon counting. The decay time was 8.7 μs at 20K, which was two to three orders shorter than the decay time usually observed in Er-doped Si. The decay time decreases above 1200°C due to the crystallization and shows a strong and negative correlation with the peak intensity.

Original languageEnglish
Title of host publication2004 1st IEEE International Conference on Group IV Photonics
Pages192-193
Number of pages2
Publication statusPublished - 2004 Dec 1
Externally publishedYes
Event2004 1st IEEE International Conference on Group IV Photonics - Hong Kong, China, Hong Kong
Duration: 2004 Sep 292004 Oct 1

Publication series

Name2004 1st IEEE International Conference on Group IV Photonics

Other

Other2004 1st IEEE International Conference on Group IV Photonics
CountryHong Kong
CityHong Kong, China
Period04/9/2904/10/1

ASJC Scopus subject areas

  • Engineering(all)

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