TY - GEN
T1 - 1.5 μm PL fine structures and their extreme fast decay of crystalline ErSiO compounds
AU - Isshiki, H.
AU - Masaki, K.
AU - Ueda, K.
AU - Saito, R.
AU - Kimura, T.
PY - 2004/12/1
Y1 - 2004/12/1
N2 - The Er-related 1.5 μm photoluminescence (PL) emissions with linewidth of less than 1meV and 10 μs lifetime in crystalline ErSiO superstructures was reported. The crystallization of ErSiO was induced by the high temperature (HT)-annealing above 1200°C. The PL decay curves of ErSiO were measured by time-gated photon counting. The decay time was 8.7 μs at 20K, which was two to three orders shorter than the decay time usually observed in Er-doped Si. The decay time decreases above 1200°C due to the crystallization and shows a strong and negative correlation with the peak intensity.
AB - The Er-related 1.5 μm photoluminescence (PL) emissions with linewidth of less than 1meV and 10 μs lifetime in crystalline ErSiO superstructures was reported. The crystallization of ErSiO was induced by the high temperature (HT)-annealing above 1200°C. The PL decay curves of ErSiO were measured by time-gated photon counting. The decay time was 8.7 μs at 20K, which was two to three orders shorter than the decay time usually observed in Er-doped Si. The decay time decreases above 1200°C due to the crystallization and shows a strong and negative correlation with the peak intensity.
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M3 - Conference contribution
AN - SCOPUS:18844433576
SN - 0780384741
T3 - 2004 1st IEEE International Conference on Group IV Photonics
SP - 192
EP - 193
BT - 2004 1st IEEE International Conference on Group IV Photonics
T2 - 2004 1st IEEE International Conference on Group IV Photonics
Y2 - 29 September 2004 through 1 October 2004
ER -