1.5 μm Multiple-Quantum-Well Distributed Feedback Laser Diodes Grown on Corrugated inp by Movpe

M. Kitamura, S. Takano, N. Henmi, T. Sasaki, H. Yamada, I. Mito, Y. Shinohara, H. Hasumi

Research output: Contribution to journalArticlepeer-review

30 Citations (Scopus)

Abstract

1.5 μm band GalnAs multiple-quantum-well distributed feedback laser diodes have been successfully fabricated on InP grating substrates by metalorganic vapour phase epitaxy for the first time. Extremely low chirp single-longitudinal-mode operation at 2.4 Gbit/s RZ modulation has been realised.

Original languageEnglish
Pages (from-to)1045-1046
Number of pages2
JournalElectronics Letters
Volume24
Issue number16
DOIs
Publication statusPublished - 1988

Keywords

  • Epitaxy and epitaxial growth
  • Quantum optics
  • Semiconductor growth
  • Semiconductor lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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