1.5 µm region InP/GaInAsP buried heterostructure lasers on semi-insulating substrates

T. Matsuoka, K. Takahei, Y. Noguchi, H. Nagai

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

InP/GalnAsP buried heterostructure (BH) lasers for the 1.5 µm region have been fabricated on semi-insulating InP substrates. The threshold current of the lasers is as low as 38 mA under CW operation at 25°C, which is nearly the same as for BH lasers fabricated on n-type InP substrates.

Original languageEnglish
Pages (from-to)12-14
Number of pages3
JournalElectronics Letters
Volume17
Issue number1
DOIs
Publication statusPublished - 1981 Jan 8
Externally publishedYes

Keywords

  • Semiconductor lasers
  • Semiconductors (III–V)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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