1.5 µm region InP/GaInAsP buried heterostructure lasers on semi-insulating substrates

T. Matsuoka; K. Takahei; Y. Noguchi; H. Nagai

doi:10.1049/el:19810010

1.5 µm region InP/GaInAsP buried heterostructure lasers on semi-insulating substrates

T. Matsuoka, K. Takahei, Y. Noguchi, H. Nagai

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

InP/GalnAsP buried heterostructure (BH) lasers for the 1.5 µm region have been fabricated on semi-insulating InP substrates. The threshold current of the lasers is as low as 38 mA under CW operation at 25°C, which is nearly the same as for BH lasers fabricated on n-type InP substrates.

Original language	English
Pages (from-to)	12-14
Number of pages	3
Journal	Electronics Letters
Volume	17
Issue number	1
DOIs	https://doi.org/10.1049/el:19810010
Publication status	Published - 1981 Jan 8
Externally published	Yes

Keywords

Semiconductor lasers
Semiconductors (III–V)

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1049/el:19810010

Cite this

@article{dfd3397a13ae4590986225dcb5bb3c66,

title = "1.5 µm region InP/GaInAsP buried heterostructure lasers on semi-insulating substrates",

abstract = "InP/GalnAsP buried heterostructure (BH) lasers for the 1.5 µm region have been fabricated on semi-insulating InP substrates. The threshold current of the lasers is as low as 38 mA under CW operation at 25°C, which is nearly the same as for BH lasers fabricated on n-type InP substrates.",

keywords = "Semiconductor lasers, Semiconductors (III–V)",

author = "T. Matsuoka and K. Takahei and Y. Noguchi and H. Nagai",

year = "1981",

month = jan,

day = "8",

doi = "10.1049/el:19810010",

language = "English",

volume = "17",

pages = "12--14",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "1",

}

TY - JOUR

T1 - 1.5 µm region InP/GaInAsP buried heterostructure lasers on semi-insulating substrates

AU - Matsuoka, T.

AU - Takahei, K.

AU - Noguchi, Y.

AU - Nagai, H.

PY - 1981/1/8

Y1 - 1981/1/8

N2 - InP/GalnAsP buried heterostructure (BH) lasers for the 1.5 µm region have been fabricated on semi-insulating InP substrates. The threshold current of the lasers is as low as 38 mA under CW operation at 25°C, which is nearly the same as for BH lasers fabricated on n-type InP substrates.

AB - InP/GalnAsP buried heterostructure (BH) lasers for the 1.5 µm region have been fabricated on semi-insulating InP substrates. The threshold current of the lasers is as low as 38 mA under CW operation at 25°C, which is nearly the same as for BH lasers fabricated on n-type InP substrates.

KW - Semiconductor lasers

KW - Semiconductors (III–V)

UR - http://www.scopus.com/inward/record.url?scp=0019875084&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0019875084&partnerID=8YFLogxK

U2 - 10.1049/el:19810010

DO - 10.1049/el:19810010

M3 - Article

AN - SCOPUS:0019875084

VL - 17

SP - 12

EP - 14

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 1

ER -

1.5 µm region InP/GaInAsP buried heterostructure lasers on semi-insulating substrates

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this