Abstract
InP/GalnAsP buried heterostructure (BH) lasers for the 1.5 µm region have been fabricated on semi-insulating InP substrates. The threshold current of the lasers is as low as 38 mA under CW operation at 25°C, which is nearly the same as for BH lasers fabricated on n-type InP substrates.
Original language | English |
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Pages (from-to) | 12-14 |
Number of pages | 3 |
Journal | Electronics Letters |
Volume | 17 |
Issue number | 1 |
DOIs | |
Publication status | Published - 1981 Jan 8 |
Externally published | Yes |
Keywords
- Semiconductor lasers
- Semiconductors (III–V)
ASJC Scopus subject areas
- Electrical and Electronic Engineering