1.5 µm region InP/GaInAsP buried heterostructure lasers on semi-insulating substrates

T. Matsuoka; K. Takahei; Y. Noguchi; H. Nagai

doi:10.1049/el:19810010

1.5 µm region InP/GaInAsP buried heterostructure lasers on semi-insulating substrates

T. Matsuoka, K. Takahei, Y. Noguchi, H. Nagai

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

InP/GalnAsP buried heterostructure (BH) lasers for the 1.5 µm region have been fabricated on semi-insulating InP substrates. The threshold current of the lasers is as low as 38 mA under CW operation at 25°C, which is nearly the same as for BH lasers fabricated on n-type InP substrates.

Original language	English
Pages (from-to)	12-14
Number of pages	3
Journal	Electronics Letters
Volume	17
Issue number	1
DOIs	https://doi.org/10.1049/el:19810010
Publication status	Published - 1981 Jan 8
Externally published	Yes

Keywords

Semiconductor lasers
Semiconductors (III–V)

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1049/el:19810010

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abstract = "InP/GalnAsP buried heterostructure (BH) lasers for the 1.5 µm region have been fabricated on semi-insulating InP substrates. The threshold current of the lasers is as low as 38 mA under CW operation at 25°C, which is nearly the same as for BH lasers fabricated on n-type InP substrates.",

keywords = "Semiconductor lasers, Semiconductors (III–V)",

author = "T. Matsuoka and K. Takahei and Y. Noguchi and H. Nagai",

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AU - Matsuoka, T.

AU - Takahei, K.

AU - Noguchi, Y.

AU - Nagai, H.

PY - 1981/1/8

Y1 - 1981/1/8

N2 - InP/GalnAsP buried heterostructure (BH) lasers for the 1.5 µm region have been fabricated on semi-insulating InP substrates. The threshold current of the lasers is as low as 38 mA under CW operation at 25°C, which is nearly the same as for BH lasers fabricated on n-type InP substrates.

AB - InP/GalnAsP buried heterostructure (BH) lasers for the 1.5 µm region have been fabricated on semi-insulating InP substrates. The threshold current of the lasers is as low as 38 mA under CW operation at 25°C, which is nearly the same as for BH lasers fabricated on n-type InP substrates.

KW - Semiconductor lasers

KW - Semiconductors (III–V)

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