InP/GalnAsP buried heterostructure (BH) lasers for the 1.5 µm region have been fabricated on semi-insulating InP substrates. The threshold current of the lasers is as low as 38 mA under CW operation at 25°C, which is nearly the same as for BH lasers fabricated on n-type InP substrates.
- Semiconductor lasers
- Semiconductors (III–V)
ASJC Scopus subject areas
- Electrical and Electronic Engineering