14ns write speed 128Mb density Embedded STT-MRAM with endurance>10 10 and 10yrs retention@85°C using novel low damage MTJ integration process

H. Sato, H. Honjo, T. Watanabe, M. Niwa, H. Koike, S. Miura, T. Saito, H. Inoue, T. Nasuno, T. Tanigawa, Y. Noguchi, T. Yoshiduka, M. Yasuhira, S. Ikeda, S. Y. Kang, T. Kubo, K. Yamashita, Y. Yagi, R. Tamura, T. Endoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

Novel damage control integration process technology has been developed through development of new low-damage MgO deposition process, low-damage RIE process, and low temperature SiN-cap process. Application of the developed damage control integration process technology to MTJ fabrication enabled us to demonstrate an improvement of TMR ratio, thermal stability factor, and switching efficiency. Moreover, it is shown that the endurance of the fabricated MTJs is over 10 10 , although thermal stability factor drastically increased. Finally, with the developed 37-nm p-MTJ technology and the damage control integration process technology, 128Mb density embedded STT-MRAM was fabricated. By using our 128Mb density STT-MRAM, 14ns write speed at V dd of 1.2V was successfully demonstrated. This result will contribute to low power MCU/IoT chip solution and so on.

Original languageEnglish
Title of host publication2018 IEEE International Electron Devices Meeting, IEDM 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages27.2.1-27.2.4
ISBN (Electronic)9781728119878
DOIs
Publication statusPublished - 2019 Jan 16
Event64th Annual IEEE International Electron Devices Meeting, IEDM 2018 - San Francisco, United States
Duration: 2018 Dec 12018 Dec 5

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2018-December
ISSN (Print)0163-1918

Conference

Conference64th Annual IEEE International Electron Devices Meeting, IEDM 2018
CountryUnited States
CitySan Francisco
Period18/12/118/12/5

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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