A 140 GHz CMOS wideband amplifier is proposed with the low group delay variation required to achieve a high-speed D-band wireless receiver. The amplifier is fabricated by the standard 1P12M 65nm CMOS process. From measurement, the gain is 10 dB with a group delay variation of 10.2 ps. The 0.1 dB bandwidth, used as the figure of merit of the gain flatness, is 12 GHz, whereas the generally used 3 dB bandwidth is 27.6 GHz. The power consumption is 57.1mW with a supply voltage of 1.2V.
- Group delay
- Millimeter wave
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering