13.56 and 100 MHz coupled mode Rf-sputtering for ferroelectric Sr 2(Ta1-x,Nbx)2O7 (STN) film applied to one-transistor type ferroelectric random access memory

Ichirou Takahashi; Masaki Hirayama; Yasuyuki Shirai; Akinobu Teramoto; Shigetoshi Sugawa; Tadahiro Ohmi

doi:10.1080/00150190802368008

13.56 and 100 MHz coupled mode Rf-sputtering for ferroelectric Sr ₂(Ta_1-x,Nb_x)₂O₇ (STN) film applied to one-transistor type ferroelectric random access memory

Ichirou Takahashi, Masaki Hirayama, Yasuyuki Shirai, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Contribution to journal › Conference article › peer-review

Abstract

We have formed ferroelectric Sr₂(Ta_1-x,Nb _x)₂O₇ (STN) film by using our developed 13.56 and 100 MHz coupled mode rf-sputtering system. For forming ferroelectric STN [perovskite Sr₂(Ta_1-x,Nb_x)₂O ₇ phase], Ta and Nb are oxidized to a pentad, i.e., (Ta _1-x,Nb_x)₂O₇ needs to be formed. The oxidations of Ta and Nb to pentad are difficult, because their ionization energies are very large. This means that oxygen vacancies exist in the films. We have successfully formed STN film whose oxygen vacancies are reduced by the coupled mode rf-sputtering system.

Original language	English
Pages (from-to)	90-95
Number of pages	6
Journal	Ferroelectrics
Volume	368
Issue number	1 PART 2
DOIs	https://doi.org/10.1080/00150190802368008
Publication status	Published - 2008 Dec 1
Event	11th European Meeting on Ferroelectricity, EMF-2007 - Bled, Slovenia Duration: 2007 Sep 3 → 2007 Sep 7

Keywords

Coupled mode rf-sputtering
Kr/O2 plasma
Oxygen vacancy
Sr(Ta,Nb)O (STN)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1080/00150190802368008

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13.56 and 100 MHz coupled mode Rf-sputtering for ferroelectric Sr ₂(Ta_1-x,Nb_x)₂O₇ (STN) film applied to one-transistor type ferroelectric random access memory. / Takahashi, Ichirou; Hirayama, Masaki ; Shirai, Yasuyuki; Teramoto, Akinobu; Sugawa, Shigetoshi; Ohmi, Tadahiro.

In: Ferroelectrics, Vol. 368, No. 1 PART 2, 01.12.2008, p. 90-95.

Research output: Contribution to journal › Conference article › peer-review

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title = "13.56 and 100 MHz coupled mode Rf-sputtering for ferroelectric Sr 2(Ta1-x,Nbx)2O7 (STN) film applied to one-transistor type ferroelectric random access memory",

abstract = "We have formed ferroelectric Sr2(Ta1-x,Nb x)2O7 (STN) film by using our developed 13.56 and 100 MHz coupled mode rf-sputtering system. For forming ferroelectric STN [perovskite Sr2(Ta1-x,Nbx)2O 7 phase], Ta and Nb are oxidized to a pentad, i.e., (Ta 1-x,Nbx)2O7 needs to be formed. The oxidations of Ta and Nb to pentad are difficult, because their ionization energies are very large. This means that oxygen vacancies exist in the films. We have successfully formed STN film whose oxygen vacancies are reduced by the coupled mode rf-sputtering system.",

keywords = "Coupled mode rf-sputtering, Kr/O2 plasma, Oxygen vacancy, Sr(Ta,Nb)O (STN)",

author = "Ichirou Takahashi and Masaki Hirayama and Yasuyuki Shirai and Akinobu Teramoto and Shigetoshi Sugawa and Tadahiro Ohmi",

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T1 - 13.56 and 100 MHz coupled mode Rf-sputtering for ferroelectric Sr 2(Ta1-x,Nbx)2O7 (STN) film applied to one-transistor type ferroelectric random access memory

AU - Takahashi, Ichirou

AU - Hirayama, Masaki

AU - Shirai, Yasuyuki

AU - Teramoto, Akinobu

AU - Sugawa, Shigetoshi

AU - Ohmi, Tadahiro

PY - 2008/12/1

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N2 - We have formed ferroelectric Sr2(Ta1-x,Nb x)2O7 (STN) film by using our developed 13.56 and 100 MHz coupled mode rf-sputtering system. For forming ferroelectric STN [perovskite Sr2(Ta1-x,Nbx)2O 7 phase], Ta and Nb are oxidized to a pentad, i.e., (Ta 1-x,Nbx)2O7 needs to be formed. The oxidations of Ta and Nb to pentad are difficult, because their ionization energies are very large. This means that oxygen vacancies exist in the films. We have successfully formed STN film whose oxygen vacancies are reduced by the coupled mode rf-sputtering system.

AB - We have formed ferroelectric Sr2(Ta1-x,Nb x)2O7 (STN) film by using our developed 13.56 and 100 MHz coupled mode rf-sputtering system. For forming ferroelectric STN [perovskite Sr2(Ta1-x,Nbx)2O 7 phase], Ta and Nb are oxidized to a pentad, i.e., (Ta 1-x,Nbx)2O7 needs to be formed. The oxidations of Ta and Nb to pentad are difficult, because their ionization energies are very large. This means that oxygen vacancies exist in the films. We have successfully formed STN film whose oxygen vacancies are reduced by the coupled mode rf-sputtering system.

KW - Coupled mode rf-sputtering

KW - Kr/O2 plasma

KW - Oxygen vacancy

KW - Sr(Ta,Nb)O (STN)

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T2 - 11th European Meeting on Ferroelectricity, EMF-2007

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