13.56 and 100 MHz coupled mode Rf-sputtering for ferroelectric Sr 2(Ta1-x,Nbx)2O7 (STN) film applied to one-transistor type ferroelectric random access memory

Ichirou Takahashi, Masaki Hirayama, Yasuyuki Shirai, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Contribution to journalConference articlepeer-review

Abstract

We have formed ferroelectric Sr2(Ta1-x,Nb x)2O7 (STN) film by using our developed 13.56 and 100 MHz coupled mode rf-sputtering system. For forming ferroelectric STN [perovskite Sr2(Ta1-x,Nbx)2O 7 phase], Ta and Nb are oxidized to a pentad, i.e., (Ta 1-x,Nbx)2O7 needs to be formed. The oxidations of Ta and Nb to pentad are difficult, because their ionization energies are very large. This means that oxygen vacancies exist in the films. We have successfully formed STN film whose oxygen vacancies are reduced by the coupled mode rf-sputtering system.

Original languageEnglish
Pages (from-to)90-95
Number of pages6
JournalFerroelectrics
Volume368
Issue number1 PART 2
DOIs
Publication statusPublished - 2008 Dec 1
Event11th European Meeting on Ferroelectricity, EMF-2007 - Bled, Slovenia
Duration: 2007 Sep 32007 Sep 7

Keywords

  • Coupled mode rf-sputtering
  • Kr/O2 plasma
  • Oxygen vacancy
  • Sr(Ta,Nb)O (STN)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of '13.56 and 100 MHz coupled mode Rf-sputtering for ferroelectric Sr <sub>2</sub>(Ta<sub>1-x</sub>,Nb<sub>x</sub>)<sub>2</sub>O<sub>7</sub> (STN) film applied to one-transistor type ferroelectric random access memory'. Together they form a unique fingerprint.

Cite this