130-GHz fT SiGe HBT technology

Katsuya Oda, Eiji Ohue, Masamichi Tanabe, Hiromi Shimamoto, Takahiro Onai, Katsuyoshi Washio

Research output: Contribution to journalConference article

66 Citations (Scopus)

Abstract

A real emitter/base heterojunction was formed with the optimization of the vertical profile of the transistor, and good crystallinity of SiGe was achieved by using a UHV/CVD system with high-pressure H2 precleaning of the substrate. As a result, a record cutoff frequency up to 130 GHz and the current gain up to 29,000 were obtained with a graded and uniform Ge profiles, respectively.

Original languageEnglish
Pages (from-to)791-794
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
Publication statusPublished - 1997 Dec 1
Externally publishedYes
Event1997 International Electron Devices Meeting - Washington, DC, USA
Duration: 1997 Dec 71997 Dec 10

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Oda, K., Ohue, E., Tanabe, M., Shimamoto, H., Onai, T., & Washio, K. (1997). 130-GHz fT SiGe HBT technology. Technical Digest - International Electron Devices Meeting, IEDM, 791-794.