130-GHz fT SiGe HBT technology

Katsuya Oda; Eiji Ohue; Masamichi Tanabe; Hiromi Shimamoto; Takahiro Onai; Katsuyoshi Washio

130-GHz f_T SiGe HBT technology

Katsuya Oda, Eiji Ohue, Masamichi Tanabe, Hiromi Shimamoto, Takahiro Onai, Katsuyoshi Washio

Research output: Contribution to journal › Conference article › peer-review

Abstract

A real emitter/base heterojunction was formed with the optimization of the vertical profile of the transistor, and good crystallinity of SiGe was achieved by using a UHV/CVD system with high-pressure H₂ precleaning of the substrate. As a result, a record cutoff frequency up to 130 GHz and the current gain up to 29,000 were obtained with a graded and uniform Ge profiles, respectively.

Original language	English
Pages (from-to)	791-794
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
Publication status	Published - 1997 Dec 1
Externally published	Yes
Event	1997 International Electron Devices Meeting - Washington, DC, USA Duration: 1997 Dec 7 → 1997 Dec 10

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

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title = "130-GHz fT SiGe HBT technology",

abstract = "A real emitter/base heterojunction was formed with the optimization of the vertical profile of the transistor, and good crystallinity of SiGe was achieved by using a UHV/CVD system with high-pressure H2 precleaning of the substrate. As a result, a record cutoff frequency up to 130 GHz and the current gain up to 29,000 were obtained with a graded and uniform Ge profiles, respectively.",

author = "Katsuya Oda and Eiji Ohue and Masamichi Tanabe and Hiromi Shimamoto and Takahiro Onai and Katsuyoshi Washio",

year = "1997",

month = dec,

day = "1",

language = "English",

pages = "791--794",

journal = "Technical Digest - International Electron Devices Meeting",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "1997 International Electron Devices Meeting ; Conference date: 07-12-1997 Through 10-12-1997",

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TY - JOUR

T1 - 130-GHz fT SiGe HBT technology

AU - Oda, Katsuya

AU - Ohue, Eiji

AU - Tanabe, Masamichi

AU - Shimamoto, Hiromi

AU - Onai, Takahiro

AU - Washio, Katsuyoshi

PY - 1997/12/1

Y1 - 1997/12/1

N2 - A real emitter/base heterojunction was formed with the optimization of the vertical profile of the transistor, and good crystallinity of SiGe was achieved by using a UHV/CVD system with high-pressure H2 precleaning of the substrate. As a result, a record cutoff frequency up to 130 GHz and the current gain up to 29,000 were obtained with a graded and uniform Ge profiles, respectively.

AB - A real emitter/base heterojunction was formed with the optimization of the vertical profile of the transistor, and good crystallinity of SiGe was achieved by using a UHV/CVD system with high-pressure H2 precleaning of the substrate. As a result, a record cutoff frequency up to 130 GHz and the current gain up to 29,000 were obtained with a graded and uniform Ge profiles, respectively.

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M3 - Conference article

AN - SCOPUS:84886448070

SN - 0163-1918

SP - 791

EP - 794

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - 1997 International Electron Devices Meeting

Y2 - 7 December 1997 through 10 December 1997

ER -

130-GHz f_T SiGe HBT technology

Abstract

ASJC Scopus subject areas

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