12-ps ECL using low-base-resistance si bipolar transistor by self-aligned Metal/IDP technology

Takahiro Onai, Eiji Ohue, Masamichi Tanabe, Katsuyoshi Washio

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

A self-aligned metal/IDP (SMI) technology is proposed to reduce the external base resistance and to enable fabrication of high-speed bipolar transistors. This SMI technology produces a self-aligned base electrode of stacked layers of metal and in situ-doped poly-Si (IDP) with a small thermal budget by selective tungsten CVD. It provides the low base resistance and a shallow link base for the small-collector capacitance and the high-cutoff frequency. The base resistance is reduced to a half that in a transistor having a conventional poly-Si base electrode. A maximum oscillation frequency of 81 GHz and a 12.2-ps gate delay time in an ECL ring oscillator at a voltage swing of 250 mV were achieved by using the SMI technology even with an ion-implanted base.

Original languageEnglish
Pages (from-to)2207-2212
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume44
Issue number12
DOIs
Publication statusPublished - 1997 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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