116GHz CMOS injection locked oscillator with -99.3dBc/Hz at 1MHz offset phase noise

Mizuki Motoyoshi, Minoru Fujishima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

To satisfy consumer demand for ultrahigh-speed wireless communication, oscillator in the D-band using CMOS as well as compound semiconductors are under development. However, the phase noise is large because a small device is used to achieve a high operating frequency. In the D-band oscillator, suppressing 1/f noise is effective in the improving the phase noise. In this study, a 116GHz CMOS injection locked oscillator (ILO) with 99.3dBc/Hz at 1MHz offset phase noise is proposed. To improve the phase noise, a master-slave topology and injection locking are used. The circuit is fabricated by 65nm 1P12M CMOS process. The core size of the chip is 530×520m2 including pads. At a supply voltage of 0.6V, the phase noise was 99.3dBc/Hz at 1MHz offset, and the power consumption was 1.45mW. The oscillator can be tuned from 116.05 to 116.57GHz. The FOM of the proposed ILO is 18.7dB higher than those of previously reported oscillators.

Original languageEnglish
Title of host publication2010 Asia-Pacific Microwave Conference Proceedings, APMC 2010
Pages786-789
Number of pages4
Publication statusPublished - 2010 Dec 1
Externally publishedYes
Event2010 Asia-Pacific Microwave Conference, APMC 2010 - Yokohama, Japan
Duration: 2010 Dec 72010 Dec 10

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC

Other

Other2010 Asia-Pacific Microwave Conference, APMC 2010
CountryJapan
CityYokohama
Period10/12/710/12/10

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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