TY - JOUR
T1 - 10K Gate I2L and 1K Component Analog Compatible Bipolar VLSI Technology—HIT-2
AU - Washio, Katsuyoshi
AU - Watanabe, Tomoyuki
AU - Okabe, Takahiro
AU - Horie, Noboru
PY - 1985/2
Y1 - 1985/2
N2 - An advanced analog/digital bipolar VLSI technology that combines on the same chip 2-ns 10K I2L gates with 1K analog devices is proposed. The new technology, called high-density integration technology-2 (HIT-2), is based on a new structure concept that consists of three major techniques: Shallow grooved-isolation, I2L active layer etching, and I2L current gain increase. I2L circuits with 80-MHz maximum toggle frequency have developed compatibly with n-p-n transistors having a B VCEOof more than 10 V and an fTof 5 GHz, and lateral p-n-p transistors having an fT of 150 MHz.
AB - An advanced analog/digital bipolar VLSI technology that combines on the same chip 2-ns 10K I2L gates with 1K analog devices is proposed. The new technology, called high-density integration technology-2 (HIT-2), is based on a new structure concept that consists of three major techniques: Shallow grooved-isolation, I2L active layer etching, and I2L current gain increase. I2L circuits with 80-MHz maximum toggle frequency have developed compatibly with n-p-n transistors having a B VCEOof more than 10 V and an fTof 5 GHz, and lateral p-n-p transistors having an fT of 150 MHz.
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U2 - 10.1109/JSSC.1985.1052289
DO - 10.1109/JSSC.1985.1052289
M3 - Article
AN - SCOPUS:0022008631
VL - 20
SP - 157
EP - 161
JO - IEEE Journal of Solid-State Circuits
JF - IEEE Journal of Solid-State Circuits
SN - 0018-9200
IS - 1
ER -