10.5 A 90nm 20MHz fully nonvolatile microcontroller for standby-power-critical applications

Noboru Sakimura, Yukihide Tsuji, Ryusuke Nebashi, Hiroaki Honjo, Ayuka Morioka, Kunihiko Ishihara, Keizo Kinoshita, Shunsuke Fukami, Sadahiko Miura, Naoki Kasai, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu, Tadahiko Sugibayashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

80 Citations (Scopus)

Abstract

Recently there has been increased demand for not only ultra-low power, but also high performance, even in standby-power-critical applications. Sensor nodes, for example, need a microcontroller unit (MCU) that has the ability to process signals and compress data immediately. A previously reported 130nm CMOS and FeRAM-based MCU features zero-standby power and fast wakeup operation by incorporating FeRAM devices into logic circuits [1]. The 8MHz speed, however, was not sufficiently high to meet application requirements, and the FeRAM process also has drawbacks: low compatibility with standard CMOS, and write endurance limitations. A spintronics-based nonvolatile integrated circuit is a promising option to achieve zero standby power and high-speed operation, along with compatibility with CMOS processes. In this work, we demonstrate a fully nonvolatile 16b MCU using 90nm standard CMOS and three-terminal SpinRAM technology. It achieves 20MHz, 145μW/MHz operation with a 1V supply in the active state, and 4.5μW intermittent operation with 120ns wakeup time and 0.1% active ratio, without forwarding of re-boot code from memory. The features provide sufficiently long battery life to achieve maintenance-free sensor nodes.

Original languageEnglish
Title of host publication2014 IEEE International Solid-State Circuits Conference, ISSCC 2014 - Digest of Technical Papers
Pages184-185
Number of pages2
DOIs
Publication statusPublished - 2014 Apr 14
Event2014 61st IEEE International Solid-State Circuits Conference, ISSCC 2014 - San Francisco, CA, United States
Duration: 2014 Feb 92014 Feb 13

Publication series

NameDigest of Technical Papers - IEEE International Solid-State Circuits Conference
Volume57
ISSN (Print)0193-6530

Other

Other2014 61st IEEE International Solid-State Circuits Conference, ISSCC 2014
CountryUnited States
CitySan Francisco, CA
Period14/2/914/2/13

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Sakimura, N., Tsuji, Y., Nebashi, R., Honjo, H., Morioka, A., Ishihara, K., Kinoshita, K., Fukami, S., Miura, S., Kasai, N., Endoh, T., Ohno, H., Hanyu, T., & Sugibayashi, T. (2014). 10.5 A 90nm 20MHz fully nonvolatile microcontroller for standby-power-critical applications. In 2014 IEEE International Solid-State Circuits Conference, ISSCC 2014 - Digest of Technical Papers (pp. 184-185). [6757392] (Digest of Technical Papers - IEEE International Solid-State Circuits Conference; Vol. 57). https://doi.org/10.1109/ISSCC.2014.6757392