The defect structures in orthorhombic C54 crystallites in thin films of Mo-doped TiSi2 produced by co-sputtering have been investigated by transmission electron microscopy. Almost all C54 crystallites contain a twin boundary parallel to (101), dividing a crystallite into two regions, each of which also contains many thin twins with the habit plane parallel to (001), which is inclined by about 45° from (101). Both of the two regions divided by the twin boundary parallel to (101) tend to have facets on (001) as well as thin twins with the habit plane parallel to (001). As a result, C54 crystallites exhibit a characteristic shape just like an oak leaf. While twins with the (001) habit plane have been observed in C54 crystallites in both binary and Mo-doped TiSi2 thin films, those with the (101) habit plane are present only in Mo-doped TiSi2 thin films. The twinning elements for (101) twins are determined to be K1 = (101), η 1 = [1̄01], K2 = (001) and η2 = . The origin of (101) twins in Mo-doped TiSi2 is discussed in terms of the change in the c/a axial ratio upon alloying TiSi2 with Mo.
ASJC Scopus subject areas
- Condensed Matter Physics