100 nm period silicon antireflection structures fabricated using a porous alumina membrane mask

Research output: Contribution to journalArticlepeer-review

269 Citations (Scopus)

Abstract

An ordered anodic porous alumina membrane has been used as a lithographic mask of SF6 fast atom beam etching to generate a 100 nm period antireflection structure on a silicon substrate. The antireflection structure consists of a deep hexagonal grating with 100 nm period and aspect ratio of 12, which is a fine two-dimensional antireflection structure. In the wavelength region from 400 to 800 nm, the reflectivity of the silicon surface decreases from around 40% to less than 1.6%. The measured results are explained well with the theoretical results calculated on the basis of rigorous coupled-wave analysis.

Original languageEnglish
Pages (from-to)142-143
Number of pages2
JournalApplied Physics Letters
Volume78
Issue number2
DOIs
Publication statusPublished - 2001 Jan 8

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of '100 nm period silicon antireflection structures fabricated using a porous alumina membrane mask'. Together they form a unique fingerprint.

Cite this