100-GHz fT Si homojunction bipolar technology

Eiji Ohue, Yukihiro Kiyota, Takahiro Onai, Masamichi Tanabe, Katsuyoshi Washio

Research output: Contribution to journalConference article

12 Citations (Scopus)

Abstract

Rapid vapor-phase doping (RVD) provides very shallow and abrupt boron profiles. A cutoff-frequency of 100 GHz was achieved with a Si BJT having a base formed by RVD. Self-aligned metal/IDP (SMI) technology can reduce base resistance and collector capacitance. Combining RVD with SMI technology, a maximum oscillation frequency of 74 GHz and a 13.6-ps delay time in an ECL ring oscillator were achieved. The results showed homojunction transistors are valid for future high-speed and high-frequency applications.

Original languageEnglish
Pages (from-to)106-107
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
Publication statusPublished - 1996 Jan 1
Externally publishedYes
EventProceedings of the 1996 Symposium on VLSI Technology - Honolulu, HI, USA
Duration: 1996 Jun 111996 Jun 13

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of '100-GHz f<sub>T</sub> Si homojunction bipolar technology'. Together they form a unique fingerprint.

  • Cite this