Rapid vapor-phase doping (RVD) provides very shallow and abrupt boron profiles. A cutoff-frequency of 100 GHz was achieved with a Si BJT having a base formed by RVD. Self-aligned metal/IDP (SMI) technology can reduce base resistance and collector capacitance. Combining RVD with SMI technology, a maximum oscillation frequency of 74 GHz and a 13.6-ps delay time in an ECL ring oscillator were achieved. The results showed homojunction transistors are valid for future high-speed and high-frequency applications.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|Publication status||Published - 1996 Jan 1|
|Event||Proceedings of the 1996 Symposium on VLSI Technology - Honolulu, HI, USA|
Duration: 1996 Jun 11 → 1996 Jun 13
ASJC Scopus subject areas
- Electrical and Electronic Engineering