TY - GEN
T1 - (100)- and (110)-oriented nMOSFETs with highly scaled EOT in La-silicate/Si interface for multi-gate architecture
AU - Kawanago, T.
AU - Kakushima, K.
AU - Ahmet, P.
AU - Kataoka, Y.
AU - Nishiyama, A.
AU - Sugii, N.
AU - Tsutsui, K.
AU - Natori, K.
AU - Hattori, T.
AU - Iwai, H.
PY - 2012
Y1 - 2012
N2 - This paper reports on detailed comparison between (100)- and (110)-oriented nMOSFETs with direct contact of La-silicate/Si interface structure for expansion to multi-gate architecture including FinFETs, trigate FETs, and nanowire FETs. Scaled EOT of 0.73 nm for (110)-oriented nMOSFETs has been achieved as well as (100)-oriented nMOSFETs. Although the large interface state density originating from (110) orientation was observed, fairly nice interfacial property was obtained from (110)-oriented nMOSFETs at scaled EOT region. Moreover, larger interface state density in (110) orientation did not affect on Vth instability. It was found that Vth shift of nMOSFETs is mainly caused by bulk trapping of electron in La-silicate as well as Hf-based oxides.
AB - This paper reports on detailed comparison between (100)- and (110)-oriented nMOSFETs with direct contact of La-silicate/Si interface structure for expansion to multi-gate architecture including FinFETs, trigate FETs, and nanowire FETs. Scaled EOT of 0.73 nm for (110)-oriented nMOSFETs has been achieved as well as (100)-oriented nMOSFETs. Although the large interface state density originating from (110) orientation was observed, fairly nice interfacial property was obtained from (110)-oriented nMOSFETs at scaled EOT region. Moreover, larger interface state density in (110) orientation did not affect on Vth instability. It was found that Vth shift of nMOSFETs is mainly caused by bulk trapping of electron in La-silicate as well as Hf-based oxides.
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U2 - 10.1109/ESSDERC.2012.6343340
DO - 10.1109/ESSDERC.2012.6343340
M3 - Conference contribution
AN - SCOPUS:84870578246
SN - 9781467317078
T3 - European Solid-State Device Research Conference
SP - 89
EP - 92
BT - 2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012
T2 - 42nd European Solid-State Device Research Conference, ESSDERC 2012
Y2 - 17 September 2012 through 21 September 2012
ER -