(100)- and (110)-oriented nMOSFETs with highly scaled EOT in La-silicate/Si interface for multi-gate architecture

T. Kawanago, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    This paper reports on detailed comparison between (100)- and (110)-oriented nMOSFETs with direct contact of La-silicate/Si interface structure for expansion to multi-gate architecture including FinFETs, trigate FETs, and nanowire FETs. Scaled EOT of 0.73 nm for (110)-oriented nMOSFETs has been achieved as well as (100)-oriented nMOSFETs. Although the large interface state density originating from (110) orientation was observed, fairly nice interfacial property was obtained from (110)-oriented nMOSFETs at scaled EOT region. Moreover, larger interface state density in (110) orientation did not affect on Vth instability. It was found that Vth shift of nMOSFETs is mainly caused by bulk trapping of electron in La-silicate as well as Hf-based oxides.

    Original languageEnglish
    Title of host publication2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012
    Pages89-92
    Number of pages4
    DOIs
    Publication statusPublished - 2012
    Event42nd European Solid-State Device Research Conference, ESSDERC 2012 - Bordeaux, France
    Duration: 2012 Sep 172012 Sep 21

    Publication series

    NameEuropean Solid-State Device Research Conference
    ISSN (Print)1930-8876

    Other

    Other42nd European Solid-State Device Research Conference, ESSDERC 2012
    CountryFrance
    CityBordeaux
    Period12/9/1712/9/21

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Safety, Risk, Reliability and Quality

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