100 Å-thick tunnel junction by double impurity doping liquid phase epitaxy for V-band TUNNETT oscillation

Jun Ichi Nishizawa, Akihiko Murai, Hiroki Makabe, Osamu Ito, Tomoyuki Kimura, Ken Suto, Yutaka Oyama

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

The tunnel injection transit time (TUNNETT) diodes with p+p +n+n-n+ structure were fabricated by liquid phase epitaxy (LPE). About 100 Å tunnel junction (p +n+) was successfully prepared by the double impurity diffusion of Ge and S during LPE growth. Continuous wave (CW) oscillation was realized at 51.520 GHz in the V-band cavity with the phase noise of -60 dBc/Hz at 1 kHz bandwidth.

Original languageEnglish
Pages (from-to)2251-2254
Number of pages4
JournalSolid-State Electronics
Volume48
Issue number12
DOIs
Publication statusPublished - 2004 Dec

Keywords

  • Impurity diffusion
  • Liquid phase epitaxy
  • Microwave devices
  • TUNNETT
  • Transit time effect diodes
  • Tunnel junctions

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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